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BB669E7904XT

Description
Variable Capacitance Diode, Very High Frequency, 56.5pF C(T), Silicon, ROHS COMPLIANT PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size897KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BB669E7904XT Overview

Variable Capacitance Diode, Very High Frequency, 56.5pF C(T), Silicon, ROHS COMPLIANT PACKAGE-2

BB669E7904XT Parametric

Parameter NameAttribute value
MakerInfineon
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresCAPACITANCE MATCHED TO 2 %
ConfigurationSINGLE
Diode Capacitance Tolerance9.33%
Minimum diode capacitance ratio14.5
Nominal diode capacitance56.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BB669/BB689...
Silicon Tuning Diode
For VHF TV tuners
Very high capacitance ratio
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
Pb-free (RoHS compliant) package
BB669
BB689
BB689-02V

Type
BB669
BB689
BB689-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
single
L
S
(nH)
1.8
0.6
0.6
Marking
red 1
EE
E
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
(
R
5kΩ )
Forward current
Operating temperature range
Storage temperature
I
F
T
op
T
stg
20
-55 ... 150
-55 ... 150
mA
°C
Symbol
V
R
V
RM
Value
30
35
Unit
V
1
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