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Datasheet> All Categories > The transistor> BC81840
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BC81840

Description
1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryThe transistor   
File Size46KB，4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BC81840 Overview

1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC81840 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

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Download Datasheet
BC817/BC818
BC817/BC818
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/BC808
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Collector Emitter Voltage
: BC817
: BC818
V
CEO
Collector Emitter Voltage
: BC817
: BC818
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
45
25
5
800
310
150
-65 ~ 150
V
V
V
mA
mW
°C
°C
50
30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10mA, I
B
=0
Min.
45
25
I
C
=0.1mA, V
BE
=0
50
30
I
E
=0.1mA, I
C
=0
V
CE
=25V, V
BE
=0
V
EB
=4V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA
f=50MHz
V
CB
=10V, f=1MHz
100
12
100
60
5
100
100
630
0.7
1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002

BC81840 Related Products

BC81840 BC81825
Description 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
Is Samacsys N N
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 25 V 25 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 250 160
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
Base Number Matches 1 1

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