BC818-40 datasheet, PDF - EEWORLD Datasheet

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BC818-40: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryThe transistor; File Size46KB，1 Pages; ManufacturerDiodes Incorporated

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BC818-40 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BC818-40 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	250
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 4 june 1996

PARTMARKING DETAILS

BC817

6DZ

BC817-16 6AZ

BC817-25 6BZ

BC817-40 6CZ

COMPLEMENTARY TYPES

BC817

BC807

BC818

BC808

7

BC818

6HZ

BC818-16 6EZ

BC818-25 6FZ

BC818-40 6GZ

Not Recommended for New Design

Please Use BCW66H

BC817

BC818

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Peak Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

I

BM

P

tot

T

j

:T

stg

BC817

50

45

5

1

500

100

200

330

-55 to +150

30

25

SOT23

BC818

UNIT

V

A

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Turn-on Voltage

Static Forward Current

Transfer Ratio

-16

-25

-40

Transition

Frequency

Collector-base

Capacitance

f

T

C

obo

SYMBOL

I

CBO

I

EBO

V

CE(sat)

V

BE(on)

h

FE

100

40

100

160

250

200

5.0

MIN.

TYP.

MAX. UNIT CONDITIONS.

0.1

5

10

700

1.2

600

250

400

600

MHz

pF

µ

A

µ

A

µ

A

V

CB

=20V, I

E

=0

V

CB

=20V, I

E

=0, T

amb

=150°C

V

EB

=5V, I

C

=0

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

I

C

=500mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

I

C

=10mA, V

CE

=5V

f=35MHz

I

E

=I

e

=0, V

CB

=10V

f=1MHz

mV

V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3 - 10

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