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BC848B

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN
CategoryThe transistor   
File Size448KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance  
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BC848B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN

BC848B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC848B
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
P
CM
:
0.225
W (Tamb=25
O
C) Note1
* Collector current
I
CM
:
0.1
A
* Collector-base voltage
V
CBO
:
30
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 10mA, I
C
=0)
Collector cut-off current (V
CB
= 30V, I
E
=0)
Collector cut-off current (V
CE
= 30V, I
B
=0)
Emitter cut-off current (V
EB
= 5V, I
C
=0)
DC current gain (V
CE
= 5V, I
C
= 2mA)
Collector-emitter saturation voltage (I
C
= 100mA, I
B
= 5mA)
Base-emitter saturation voltage (I
C
= 100mA, I
B
= 5mA)
Transition frequency (V
CE
= 5V, I
C
= 10mA, f= 100MH
Z
)
DEVICE MARKING
BC848B
Notes: 1. Transistor mounted on an FR4 Printed-circuit board.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
1K
2007-3
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
MIN
30
30
6
-
-
-
200
-
-
100
MAX
-
-
-
0.1
0.1
0.1
450
0.5
1.1
-
UNITS
V
V
V
mA
mA
mA
-
V
V
MH
Z
f
T
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