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PN3642

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size53KB,1 Pages
ManufacturerCentral Semiconductor
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PN3642 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

PN3642 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1448507541
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
YTEOL7.05
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.22 V
145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824

PN3642 Related Products

PN3642 2N3641 2N3642 2N3643 PN3641
Description Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-105 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-105 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-105 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-105
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction CYLINDRICAL, O-PBCY-T3 NPN SILICON SIGNAL TRANSISTOR CYLINDRICAL, O-XBCY-T3 CYLINDRICAL, O-XBCY-T3 TO-92, 3 PIN
Reach Compliance Code not_compliant _compli _compli _compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Collector-based maximum capacity 8 pF 8 pF 8 pF 8 pF 8 pF
Collector-emitter maximum voltage 45 V 30 V 45 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 15 15 25 15
JEDEC-95 code TO-92 TO-105 TO-105 TO-105 TO-92
JESD-30 code O-PBCY-W3 O-XBCY-T3 O-XBCY-T3 O-XBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY UNSPECIFIED UNSPECIFIED UNSPECIFIED PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 250 MHz 150 MHz
VCEsat-Max 0.22 V 0.22 V 0.22 V 0.22 V 0.22 V
Maximum collector current (IC) - 0.5 A 0.5 A 0.5 A 0.5 A
Maximum operating temperature - 125 °C 125 °C 125 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C -55 °C
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power consumption environment - 0.35 W 0.35 W 0.35 W 0.625 W
Maximum power dissipation(Abs) - 0.35 W 0.35 W 0.35 W 0.625 W
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum off time (toff) - 150 ns 150 ns 150 ns 150 ns
Maximum opening time (tons) - 60 ns 60 ns 60 ns 60 ns
Base Number Matches - 1 1 1 -

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