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BC858CW-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryThe transistor   
File Size517KB,5 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

BC858CW-TP-HF Overview

Small Signal Bipolar Transistor,

BC858CW-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC856AW/BW
BC857AW/BW/CW
BC858AW/BW/CW
PNP
General Purpose
Transistors
SOT-323
A
D
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Ideally Suited for Automatic Insertion
Complementary PNP Silicon Types Available
For Switching and AF Amplifier Applications
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Operating temperature : -65 to +150
Storage temperature : -65 to +150
Marking: BC856AW---3A ; BC856BW---3B
BC857AW---3E ; BC857BW---3F ; BC857CW---3G
BC858AW---3J ; BC858BW---3K ; BC858CW---3L
Maximum Ratings
C
C
B
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
Collector-Emitter Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Collector Cut-off Current (V
CB
=30v)
(V
CB
=30v,T
A
=150 )
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC856AW,BC857AW,BC858AW
BC856BW,BC857BW,BC858CW
BC857CW,BC858CW
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(VCE=5V,
I
C
=10mA, f=100MHz)
Noise Figure
(V
CE
=5v,Ic=200uA,Rs=2kohm,f=1kHz)
Collector-Base Capacitance
(V
CB
=10v,f=1.0kHz)
Power Dissipation
Thermal Resistance,Juncition to
Ambient
Collector Current - Continuous
G
H
J
---
---
---
80
50
30
Vdc
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
V
(BR)CEO
---
---
---
---
---
125
220
420
---
---
100
---
---
---
---
---
65
45
30
5
15
4
250
475
800
0.65
1.10
200
10
4.5
150
625
100
Vdc
V
(BR)EBO
I
CBO
H
FE(1)
Vdc
nAdc
uAdc
---
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
V
CE(sat)
V
BE(sat)
f
T
NF
C
CBO
Pd
R
JA
Ic
Suggested Solder
Pad Layout
0.70
Vdc
Vdc
0.90
MHz
1.90
dB
pF
mW
/W
mA
0.65
0.65
inches
mm
Note 1: Transistor mounted on an FR4 printed-circuit board
Revision: C
www.mccsemi.com
1 of 5
2013/09/24
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