BCP54-16 datasheet, PDF - EEWORLD Datasheet

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BCP54-16: DescriptionPower Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryThe transistor; File Size41KB，1 Pages; ManufacturerDiodes Incorporated

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BCP54-16 Overview

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

BCP54-16 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 AUGUST 1995

7

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAILS

BCP51

BCP54

BCP54 10

BCP54 16

Not Recommended for New Design

Please Use FZT493

BCP54

C

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

45

5

1.5

1

2

-55 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

45

5

100

20

10

0.5

1.0

40

25

63

100

250

100

160

100

160

250

MHz

TYP.

MAX.

UNIT

V

nA

µ

A

µ

A

CONDITIONS.

I

C

=100

µ

A

I

C

= 10mA *

I

E

=10

µ

A

V

CB

=30V

V

CB

=30V, T

amb

=150°C

V

EB

=5V

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=2V*

I

C

=150mA,

I

C

=500mA,

I

C

=150mA,

I

C

=150mA,

V

CE

=2V*

V

CE

=2V*

V

CE

=2V*

V

CE

=2V*

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(on)

V

Static Forward Current h

FE

Transfer Ratio

BCP54-10

BCP54-16

Transition Frequency

f

T

I

C

=50mA, V

CE

=10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3 - 16

BCP54-16 Related Products

	BCP54-16	BCP54-10
Description	Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN	Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	SOT-223	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	63
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
Base Number Matches	1	1

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