UNISONIC TECHNOLOGIES CO., LTD
BCP68
NPN MEDIUM POWER
TRANSISTOR
NPN SILICON TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP69
1
SOT-223
APPLICATIONS
* General purpose switching and amplification under high current
conditions.
Lead-free:
BCP68L
Halogen-free: BCP68G
ORDERING INFORMATION
Normal
BCP68-xx-AA3-R
Ordering Number
Lead Free Plating
BCP68L-xx-AA3-R
Halogen Free
BCP68G-xx-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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BCP68
PARAMETER
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C , unless otherwise specified)
SYMBOL
RATINGS
UNIT
V
CBO
32
V
V
CEO
20
V
V
EBO
5
V
DC
I
C
1
A
Collector Current
2
A
Peak
I
CM
Peak Base Current
I
BM
200
mA
Total Power Dissipation (Ta
≤
25℃)
P
D
1.35
W
Junction Temperature
T
J
150
℃
Operating Temperature
T
OPR
-45 ~ +150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance From Junction To Ambient
SYMBOL
θ
JA
RATINGS
91
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25℃, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC Current Gain Ratio of the
Complementary Pairs
SYMBOL
TEST CONDITIONS
V
CE(SAT)
I
C
= 1A, I
B
=100mA
I
C
= 5mA, V
CE
= 10V
V
BE
I
C
= 1A, V
CE
= 1V
I
E
= 0, V
CB
= 25V
I
CBO
I
E
= 0, V
CB
= 25V, T
J
= 150℃
I
EBO
I
C
= 0, V
EB
= 5V
I
C
= 5mA, V
CE
= 10V
h
FE
I
C
= 500mA, V
CE
= 1V
I
C
= 1A, V
CE
= 1V
C
C
I
E
= i
e
= 0, V
CB
= 5V, f = 1MHz
f
T
I
C
= -10mA, V
CE
= -5V, f = 100MHz
h
FE1
|I
C
| = 0.5A, |V
CE
| = 1V
h
FE2
MIN
TYP MAX UNIT
500 mV
620
mV
1
V
100
nA
10
µA
100
nA
375
48
40
1.6
pF
MHz
50
85
60
CLASSIFICATION OF h
FE
RANK
RANGE
16
100~250
25
160~375
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BCP68
TYPICAL CHARACTERISTIC
300
250
NPN SILICON TRANSISTOR
DC Current Gain (Typical Values)
V
CE
= 1V
200
h
FE
150
100
50
0
-10
-1
1
10
I
C
(mA)
10
2
10
3
10
4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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