BCR135S-E6433 datasheet, PDF - EEWORLD Datasheet

BCR135S-E6433: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon; CategoryThe transistor; File Size113KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BCR135S-E6433 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

	BCR135S-E6433	BCR135S-E6327
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	70
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e3	e3
Number of components	2	2
Number of terminals	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
Base Number Matches	1	1

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