BCR198S-E6433 datasheet, PDF - EEWORLD Datasheet

BCR198S-E6433: DescriptionSmall Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon; CategoryThe transistor; File Size107KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BCR198S-E6433 Overview

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.07 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	190 MHz
Base Number Matches	1

	BCR198S-E6433
Description	Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.07 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	190 MHz
Base Number Matches	1

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