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IRFC340

Description
Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
CategoryThe transistor   
File Size296KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

IRFC340 Overview

Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE

IRFC340 Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeDIE
package instructionUNCASED CHIP, X-XUUC-N
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)8.7 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeX-XUUC-N
JESD-609 codee0
Number of components1
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
Base Number Matches1
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