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APTC60DSKM70T3

Description
Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
CategoryThe transistor   
File Size338KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APTC60DSKM70T3 Overview

Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25

APTC60DSKM70T3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeMODULE
package instructionMODULE-25
Contacts25
Reach Compliance Codeunknown
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1800 mJ
Shell connectionISOLATED
ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)39 A
Maximum drain current (ID)39 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X25
JESD-609 codee0
Number of components2
Number of terminals25
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
APTC60DSKM70T3
Dual buck chopper
Super Junction MOSFET
V
DSS
= 600V
R
DSon
= 70mΩ max @ Tj = 25°C
I
D
= 39A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Power Module
13 14
Q1
Q2
11
22
19
CR1
23
8
CR2
7
10
18
29
15
30
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2
3
4
7
8
10 11 12
14
13
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTC60DSKM70T3 – Rev 0 September, 2004
Max ratings
600
39
29
120
±20
70
250
20
1
1800
Unit
V
A
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