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FS1B5H

Description
Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon,
Categorydiode    Rectifier diode   
File Size198KB,4 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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FS1B5H Overview

Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon,

FS1B5H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
package instructionR-PDSO-F2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1

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FS12 thru FS1CH
Surface Mount Schottky Rectifier
Reverse Voltage 20~200V Forward Current 1A
Features
Low VF Schottky barrier diodes
Very low profile - typical height of 1.0 mm
Low forward voltage drop
Low leakage current
Moisture sensitivity: level 1, per J-STD-020
AEC-Q101 qualified
High temperature soldering guaranteed:
260℃/10
seconds
Halogen-free according to IEC 61249-2-21 definition
eSGA
(SOD‐123FL)
Typical Applications
For use of fast swiching in RF module, lighting, cellular phone, portable device,
power supplies and other consumer applications.
Maximum Ratings
Parameter
(TA = 25 °C unless otherwise noted)
Symbol
VRRM
VRMS
VDC
IF(AV)
IFSM
TJ
TSTG
FS12
20
14
20
FS13
30
21
30
FS14
40
28
40
FS16
60
42
60
1.0
30.0
- 55 to + 150
- 55 to + 150
- 55 to + 175
FS1B
100
70
100
FS1B5H FS1CH
150
105
150
200
140
200
Unit
V
V
V
A
A
°C
°C
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
p
g junction temperature range
p
g
Operating j
Storage temperature range
Electrical Characteristics
Parameter
Maximum instantaneous
g
forward voltage
Test Conditions
IF=0.5A,TA=25℃
IF 1 A,TA 25℃
IF=1 A,TA=25℃
Maximum DC reverse current at
TA=25℃
rated DC blocking voltage
TA=125℃
juntion to ambient
1)
juntion to case
Typical thermal resistance
juntion to mount
(TA = 25 °C unless otherwise noted)
Symbol
V
F
I
R
R
θJA
R
θJC
R
θJM
FS12
0.40
0.50
200
10
200
30
FS13
FS14
FS16
0.55
0 0
0.70
200
20
90
60
20
℃/W
FS1B
0.75
08
0.81
150
2
FS1B5H FS1CH
0.80
0.90
200
10
Unit
Volts
uA
mA
0.45
Note:1),The thermal resistance from junction to ambient,case or mount,mounted on P.C.B with 5×5mm copper pads,2 OZ,FR4 PCB
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