BPW76A, BPW76B
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94
8401
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 40°
• Base terminal connected
• Hermetically sealed package
• Flat glass window
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW76A
BPW76B
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
0.4 to 0.8
> 0.6
ϕ
(deg)
± 40
± 40
λ
0.1
(nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW76A
BPW76B
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
PACKAGE FORM
TO-18
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Thermal resistance junction/case
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5s
Connected with Cu wire, 0.14 mm
2
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
R
thJC
VALUE
80
70
5
50
100
250
125
- 40 to + 125
- 40 to + 125
260
400
150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
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398
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
800
P
tot
- Total Power Dissipation (mW)
600
R
thJC
400
200
R
thJA
0
0
25
50
75
100
125
150
94
8342
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Note
T
amb
= 25 °C, unless otherwise specified
E
e
= 1 mW/cm
2
,
λ
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
ϕ
λ
p
λ
0.1
V
CEsat
t
on
t
off
f
c
MIN.
70
1
6
± 40
850
450 to
1080
0.15
6
5
110
0.3
100
TYP.
MAX.
UNIT
V
nA
pF
deg
nm
nm
V
µs
µs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
TEST CONDITION
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
CE
= 5 V
PART
BPW76A
BPW76B
SYMBOL
I
ca
I
ca
MIN.
0.4
0.6
TYP.
MAX.
0.8
UNIT
mA
mA
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
6
I
CEO
- Collector Dark Current (nA)
2.50
I
ca rel
- Relative Collector Current
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
10
5
10
4
10
3
10
2
10
1
10
0
20
50
100
150
V
CE
= 20
V
E=0
V
CE
= 5V
E
e
= 1 mW/cm
2
λ
= 950 nm
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
94
8343
T
amb
- Ambient Temperature (°C)
94
8344
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Document Number: 81526
Rev. 1.4, 08-Sep-08
Fig. 3 - Relative Collector Current vs. Ambient Temperature
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399
For technical questions, contact: detectortechsupport@vishay.com
BPW76A, BPW76B
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
10
I
ca
- Collector Light Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
12
10
8
6
t
on
1
V
CE
= 5
V
R
L
= 100
Ω
λ
= 950 nm
0.1
V
CE
= 5
V
λ
= 950 nm
4
2
0
t
off
0.01
0.001
0.01
94
8345
0.1
1
10
94
8253
0
4
8
12
16
E
e
- Irradiance (mW/cm
2
)
I
C
- Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
1
I
ca
- Collector Light Current (mA)
S (λ)
rel
- Relative Spectral Sensitivity
100
BPW76A
λ
= 950 nm
E
e
= 1 mW/cm
2
0.5 mW/cm
2
1.0
0.8
0.6
0.4
0.2
0
400
600
800
1000
λ
-
Wavelength
(nm)
0.2 mW/cm
2
0.1
0.1 mW/cm
2
0.05 mW/cm
2
0.01
0.1
1
10
94
8346
V
CE
- Collector Emitter
Voltage
(V)
94
8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
C
CEO
- Collector Ermitter Capacitance (pF)
20
S
rel
- Relative Sensitivity
16
f = 1 MHz
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
12
8
4
0
0.1
1
10
100
0.6
94
8347
0.4
0.2
0
0.2
0.4
0.6
94
8247
V
CE
- Collector Ermitter
Voltage
(V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com
400
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
2.54 nom.
B
E
C
Ø 4.7
+ 0.05
- 0.1
± 0.25
Chip position
(2.5)
5.2
0.45
+ 0.02
- 0.05
13.2
± 0.7
5.5
± 0.15
technical drawings
according to DIN
specifications
Drawing-No.: 6.503-5004.01-4
Issue:1; 01.07.96
96 12175
3.9
± 0.05
Lens
Document Number: 81526
Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
401
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 01-Jan-2019
1
Document Number: 91000
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