RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAV16W
SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 150mAmpere
FEATURES
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Compact surface mount with same foot print as mini-melf
High Breakdown Voltage
Fast Switching Speed
400mW Power Dissipation
General Purpose Switching Applications
High Conductance
SOD-123
MECHANICAL DATA
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Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.110(2.80)
.102(2.60)
.067(1.70)
.059(1.50)
.026(.65)
.018(.45)
.152(3.85)
.140(3.55)
.006(.15)
.003(.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.049(1.25)
.041(1.05)
.004(.10)
.000(.00)
REF .020(0.50)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Comtinuous Current
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
Typical Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Maximum Power Dissipation (Note 3)
Typical Thermal Resistance
Operating and Storage Temperature Range
SYMBOL
V
RM
V
RRM
V
RWM
V
R
V
RMS
I
FM
I
O
@t=1.0uS
@t=1.0S
BAV16W
100
75
53
300
150
2.0
1.0
UNITS
Volts
Volts
Volts
mAmps
mAmps
Amps
nS
pF
mW
O
I
FSM
Trr
C
J
P
D
R
θJA
T
J
, T
STG
4
2
400
315
-65 to + 150
C/W
O
C
ELECTRICAL CHARACTERISTICS
(@T
A
=25
O
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
Maximum Instantaneous Forward Voltage
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
@VR=20V,
@VR=75V,
@VR=25V,
@VR=75V,
TJ=25
O
C
TJ=25
O
C
TJ=150
O
C
TJ=150
O
C
BAV16W
0.715
0.855
1.0
25
1.25
1.0
30
50
UNITS
Volts
nAmps
uAmps
uAmps
uAmps
V
F
Maximum Instantaneous Reverse Current
I
R
.
NOTES : 1. Measured at I
F
=I
R
=10mA, I
RR
=0.1I
R
And R
L
=100 .
2. Measured at 1MHz and applied reverse voltage of 0 volts.
3. Part mounted on FR-4 PC board with minimunm recommended pad layout.
2006-3
RATING AND CHARACTERISTICS CURVES ( BAV16W )
500
1000
P
D
, POWER DISSIPATION (mW)
400
I
F
, INSTANTANEOUS FORWARD CURRENT(mA)
0
25
50
75
100
125
O
100
300
10
200
1.0
100
0.1
0
150
175
.01
0
1
VF, INSTANTANEOUS FORWARD VOLTAGE(V)
2
T
A
, AMBIENT TEMPERATURE( C)
FIG.1 FORWARD DERATING CURVE
10,000
FIG.2 FORWARD CHARACTERISTICS
I
R
, LEAKAGE CURRENT (nA)
1,000
100
10
1
0
100
TJ, JUNCTION TEMPERATURE( C)
O
180
FIG.3 LEAKAGE CURRENT VS. JUNCTION TEMPERATURE
RECTRON
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Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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RECTRON