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MPS6652RL

Description
1000mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN
CategoryThe transistor   
File Size185KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MPS6652RL Overview

1000mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

MPS6652RL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)300 ns
Maximum opening time (tons)55 ns
Base Number Matches1
ON Semiconductort
Amplifier Transistors
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
MPS6601/6651
MPS6602/6652
Collector–Base Voltage
MPS6601/6651
MPS6602/6652
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
25
30
4.0
1000
625
5.0
1.5
12
–55 to +150
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
V
CEO
25
40
Vdc
Value
Unit
Vdc
NPN
MPS6601
MPS6602*
PNP
MPS6651
MPS6652*
Voltage and current are negative
for PNP transistors
*ON Semiconductor Preferred Device
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
(1)
Max
200
83.3
Unit
°C/W
°C/W
1
2
3
R
qJC
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1. R
qJA
is measured with the device soldered into a typical printed circuit board.
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
COLLECTOR
3
PNP
1
EMITTER
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
837
March, 2001 – Rev. 2
Publication Order Number:
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