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BAS31_NL

Description
Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon, SOT-23, 3 PIN
Categorydiode    Rectifier diode   
File Size27KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BAS31_NL Overview

Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon, SOT-23, 3 PIN

BAS31_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.84 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current3 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage120 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAS31
BAS31
3
Connection Diagram
3
3
2
1
L21
1
2
1
2
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
120
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
V
R
= 90 V
V
R
= 90 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100
Min
120
Max
750
840
900
1.0
1.25
100
100
35
50
Units
V
mV
mV
mV
V
V
nA
µA
pF
ns
I
R
C
T
t
rr
Reverse Current
Total Capacitance
Reverse Recovery Time
2001
Fairchild Semiconductor Corporation
BAS31, Rev. C

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