TRANSISTOR 7 A, 100 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| package instruction | 2-10L1A, 3 PIN |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 7 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 1000 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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