J/SSTJ210 Series
Vishay Siliconix
N-Channel JFETs
J210
J211
J212
PRODUCT SUMMARY
Part Number
J210
J/SSTJ211
J/SSTJ212
SSTJ211
SSTJ212
V
GS(off)
(V)
–1 to –3
–2.5 to –4.5
–4 to –6
V
(BR)GSS
Min (V)
–25
–25
–25
g
fs
Min (mS)
4
6
7
I
DSS
Min (mA)
2
7
15
FEATURES
D
Excellent High Frequency Gain:
J211/212, Gps 12 dB (typ) @ 400 MHz
D
Very Low Noise: 3 dB (typ) @
400 MHz
D
Very Low Distortion
D
High ac/dc Switch Off-Isolation
D
High Gain: A
V
= 35 @ 100
mA
BENEFITS
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High-Quality Low-Level Signal
Amplification
APPLICATIONS
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (I
GSS
< 100 pA).
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-226AA
(TO-92)
D
1
D
S
2
S
G
3
J210
J211
J212
2
1
TO-236
(SOT-23)
3
G
SSTJ211 (Z1)*
SSTJ212 (Z2)*
*Marking Code for TO-236
Top View
Top View
For applications information see AN104.
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SSTJ210 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J210
J/SSTJ211
J/SSTJ212
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
a
Drain Cutoff Current
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
= 15 V, I
D
= 1 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 10 V, I
D
= 1 mA
V
DS
= 10 V, V
GS
= –8 V
I
G
= 1 mA , V
DS
= 0 V
–35
–25
–1
2
–3
15
–100
–25
–2.5
7
–4.5
20
–100
–25
V
–4
15
–6
40
–100
mA
pA
nA
pA
V
–1
–0.5
–1
1
0.7
Dynamic
Common-Source
Forward Transconductance
b
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
C
iss
C
rss
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
4
12
150
4
pF
1.5
5
nV⁄
√Hz
NZF
6
12
200
7
12
200
mS
mS
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
www.vishay.com
7-2
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
50
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
20
g
fs
– Forward Transconductance (mS)
100 nA
I
G(on)
@ I
D
16
10 nA
T
A
= 125_C
I
G
– Gate Leakage
1 nA
I
GSS
@ 125_C
100 pA
1 mA
1 mA
10 pA
T
A
= 25_C
1 pA
I
GSS
@ 25_C
10 mA
10 mA
Gate Leakage Current
I
DSS
– Saturation Drain Current (mA)
40
30
12
20
g
fs
8
10
I
DSS
4
0
0
–2
–4
–6
–8
–10
V
GS(off
)
– Gate-Source Cutoff Voltage (V)
0
0.1 pA
0
4
8
12
16
20
V
DG
– Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
g
os
g
os
– Output Conductance (mS)
160
160
200
g
fs
– Forward Transconductance (mS)
10
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
= –5 V
8
T
A
= –55_C
6
25_C
4
125_C
2
V
DS
= 10 V
f = 1 kHz
120
120
80
r
DS
40
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
0
–2
–4
–6
–8
–10
80
40
0
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
0
0.1
1
I
D
– Drain Current (mA)
10
Output Characteristics
5
V
GS(off)
= –2 V
4
I
D
– Drain Current (µA)
V
GS
= 0 V
–0.2 V
–0.4 V
3
–0.6 V
2
–0.8 V
1
–1.0 V
–1.2 V
0
0
0.2
0.4
0.6
0.8
1
V
DS
– Drain-Source Voltage (V)
0
0
0.2
I
D
– Drain Current (mA)
12
15
Output Characteristics
V
GS(off)
= –5 V
V
GS
= 0 V
–0.5 V
9
–2.0 V
6
–2.5 V
–3.0 V
3
–3.5 V
–1.0 V
–1.5 V
0.4
0.6
0.8
V
DS
– Drain-Source Voltage (V)
1
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
10
V
GS(off)
= –2 V
8
I
D
– Drain Current (mA)
V
GS
= 0 V
I
D
– Drain Current (mA)
6
–0.2 V
–0.4 V
4
–0.6 V
–0.8 V
2
–1.0 V
–1.2 V
0
0
2
4
6
8
10
V
DS
– Drain-Source Voltage (V)
0
0
2
4
24
–1.0 V
18
–1.5 V
–2.0 V
12
–2.5 V
–3.0 V
6
V
GS(off)
= –5 V
6
8
10
–3.5 V
30
V
GS
= 0 V
–0.5 V
Output Characteristics
V
DS
– Drain-Source Voltage (V)
Transfer Characteristics
10
V
GS(off)
= –2 V
8
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
T
A
= –55_C
6
25_C
V
DS
= 10 V
24
30
Transfer Characteristics
V
GS(off)
= –5 V
V
DS
= 10 V
T
A
= –55_C
18
25_C
4
125_C
2
12
125_C
6
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
0
–1
–2
–3
–4
–5
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
V
GS(off)
= –2 V
g
fs
– Forward Transconductance (mS)
8
T
A
= –55_C
25_C
6
125_C
4
V
DS
= 10 V
f = 1 kHz
g
fs
– Forward Transconductance (mS)
8
10
Transconductance vs. Gate-Source Voltage
V
GS(off)
= –5 V
T
A
= –55_C
25_C
6
125_C
4
2
2
V
DS
= 10 V
f = 1 kHz
0
0
–1
–2
–3
–4
–5
0
0
–0.4
–0.8
–1.2
–1.6
–2
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
www.vishay.com
7-4
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
On-Resistance vs. Drain Current
50
Circuit Voltage Gain vs. Drain Current
g
fs
R
L
A
V
+
1
)
R g
L os
160
V
GS(off)
= –2 V
A
V
– Voltage Gain
120
40
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
30
80
V
GS(off)
= –5 V
V
GS(off)
= –2 V
20
V
GS(off)
= –5 V
40
T
A
= 25_C
0
1
10
I
D
– Drain Current (mA)
100
10
0
0.1
1
I
D
– Drain Current (mA)
10
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
C
rss
– Reverse Feedback Capacitance (pF)
f = 1 MHz
C iss – Input Capacitance (pF)
8
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
4
6
V
DS
= 5 V
4
V
DS
= 0 V
3
V
DS
= 5 V
2
V
DS
= 0 V
2
V
DS
= 10 V
1
V
DS
= 10 V
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
Input Admittance
100
T
A
= 25_C
V
DS
= 10 V
I
D
= 10 mA
100
T
A
= 25_C
V
DS
= 10 V
I
D
= 10 mA
Forward Admittance
10
(mS)
g
ig
b
is
(mS)
10
–b
fs
1
b
fg
–g
fg
g
fs
1
b
ig
g
is
0.1
100
200
500
f – Frequency (MHz)
1000
0.1
100
200
500
f – Frequency (MHz)
1000
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
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