RF Power Bipolar Transistor, 1-Element, Silicon, NPN
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| package instruction | DISK BUTTON, O-CRDB-F4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| JESD-30 code | O-CRDB-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 2.3 W |
| Minimum power gain (Gp) | 14 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 3300 MHz |
| Base Number Matches | 1 |
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