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1N914UR

Description
0.125 A, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size31KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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1N914UR Overview

0.125 A, SILICON, SIGNAL DIODE, DO-213AA

• 1N914UR AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/116
• SWITCHING DIODE
• HERMETICALLY SEALED
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
1N914UR
and
CDLL914
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Operating Current: 75 mA @ TA = + 25°C
Derating Factor: 0.5 mA/°C Above TA = + 25°C
Surge Current A: 1A, sine wave, Pw = 8.3ms
Surge Current B: 0.704A, square wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
Vf 1
VBR
V RWM
I0
@I F = 10mA
Vf 2
@I F = 50mA
t rr
(Note 1)
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
Volts (min)
100
Volts (pk)
75
mA
75
V dc
0.8
V dc
1.2
n sec
5
FIGURE 1
DESIGN DATA
I R1
@ 20 V dc
I R2
@ 75 V dc
I R3
@ 20 V
TA = 150°C
nA
25
µA
0.5
µA
35
I R4
@ 75 V
TA = 150°C
µA
75
pF
4.0
pF
2.8
CAPACITANCE
@0V
CAPACITANCE
@ 1.5 V
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80; LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE (ROJEC):
100 °C/W maximum AT L = 0
THERMAL IMPEDANCE: (ZO
JX): 70
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
IF = IR = 10 mA, RL = 100 ohms.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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