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CRSS055N12N

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size1MB,10 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CRSS055N12N Overview

Power device_MOSFET_12V-300V NMOS

CRSS055N12N Parametric

Parameter NameAttribute value
PARTNUMBERCRSS055N12N
PACKAGETO-263
POLARITYN
VDS120
IDA130
VTYPE104.5
VMAX105.5
VTYPE45-
VMAX45-
VGSMIN2
VGSMAX4
QGNC80.07
CISSPF5548
CRTIME202006
RN109

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CRST058N12N,CRSS055N12N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS3 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS3 N-MOSFET 120V, 4.8mΩ, 130A
Product Summary
V
DS
R
DS(on)
I
D
120V
4.8mΩ
130A
100% Avalanche Tested
100% DVDS Tested
100% Avalanche Tested
CRST058N12N
CRSS055N12N
Package Marking and Ordering Information
Part #
CRST058N12N
CRSS055N12N
Marking
CRST058N12N
CRSS055N12N
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
[1]
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
I
D
134
180
85
536
196
±20
202
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
120
Unit
V
※.
Notes:1.EAS is FT Monitoring tested at starting Tj = 25℃, L = 0.5mH, IAS = 28A, Vgs=10V.
©China Resources Microelectronics (Chongqing) Limited
Page 1
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