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CS4N70A4R

Description
Power device_MOSFET_300V-900V NMOS
CategoryMOSFET   
File Size589KB,10 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CS4N70A4R Overview

Power device_MOSFET_300V-900V NMOS

CS4N70A4R Parametric

Parameter NameAttribute value
PARTNUMBERCS4N70A4R
PACKAGETO-252
POLARITYN
VDS700
IDA4
VTYPE102550
VMAX103000
VTYPE45-
VMAX45-
VGSMIN2
VGSMAX4
QGNC12.7
CISSPF606
CRTIME202006
RN191

CS4N70A4R Preview

Download Datasheet
Silicon N-Channel
Power MOSFET
R
CS4N70 A4R
General Description
CS4N70 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
700
4
75
2.55
V
A
W
Features:
Fast Switching
Low ON Resistance
(Rdson≤3.0Ω)
Low Gate Charge
(Typical Data:12.7nC)
Low Reverse transfer capacitances
(Typical:2.7pF)
100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
Absolute
(Tc=
25℃ unless otherwise specified)
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
700
4
2.5
28
±30
196
5.0
75
0.6
150,–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
P
D
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
,T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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