FSPJ164R3 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> FSPJ164R3

FSPJ164R3: DescriptionPower Field-Effect Transistor, 68A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size107KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

Download Datasheet Parametric Compare View All

FSPJ164R3 Overview

Power Field-Effect Transistor, 68A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

FSPJ164R3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	68 A
Maximum drain-source on-resistance	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

FSPJ164R, FSPJ164F

Data Sheet

December 2001

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Fairchild Star*Power Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

system designer both extremely low r

DS(ON)

and Gate

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300 krads

while maintaining the guaranteed performance for Single

Event Effects (SEE) which the Fairchild FS families have

always featured.

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

Star*Power Gold products. Star*Power FETs are optimized

for total dose and r

DS(ON)

performance while exhibiting SEE

capability at full rated voltage up to an LET of 37. Star*Power

Gold FETs have been optimized for SEE and Gate Charge

providing SEE performance to 80% of the rated voltage for

an LET of 82 with extremely low gate charge characteristics.

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45215W.

Features

• 68A, 150V, r

DS(ON)

= 0.022Ω

• UIS Rated

• Total Dose

- Meets Pre-Rad Specifications to 100 krad (Si)

- Rated to 300 krad (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 Rad (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 14nA Per-Rad (Si)/s Typically

• Neutron

- Maintain Pre-Rad Specifications

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

Packaging

TO-254AA

Ordering Information

RAD LEVEL

10K

100K

300K

SCREENING LEVEL

PART NUMBER/BRAND

Engineering Samples FSPJ164D1

TXV

Space

TXV

Space

FSPJ164R3

FSPJ164R4

FSPJ164F3

FSPJ164F4

CAUTION: Beryllia Warning per MIL-PRF-19500

refer to package specifications.

FSPJ164R, FSPJ164F Rev. B

FSPJ164R3 Related Products

	FSPJ164R3	FSPJ164D1	FSPJ164R4
Description	Power Field-Effect Transistor, 68A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 68A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 68A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	150 V
Maximum drain current (ID)	68 A	68 A	68 A
Maximum drain-source on-resistance	0.022 Ω	0.022 Ω	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	235	235	235
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A	200 A	200 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

Recommended Resources

Switching power supply circuit composed of TL494 integrated circuit

Simple 100W inverter circuit diagram design

Ring oscillator pulse generator circuit diagram

Anti-bounce circuit using TTL NAND gate

555 transmitting trainer circuit

Cable test circuit

The low power consumption current drives me crazy, 100uA!!!: Such a huge power consumption is crazy! ! ! !The chip is msp430F413, and there are no peripheral components connected, except for a 32768 crystal oscillator, several resistors and capacitors for power...; lessun Microcontroller MCU

【Recruitment】Test Engineer: LSI Shanghai R&D Center, an American company, is recruiting talents in the field of communication storage with high salary. The salary and benefits are excellent. The company will start allotment this...; asic_tapeout Recruitment

Does anyone know which library 1N5819 is in in Altium Designer?: Does anyone know which library the 1N5819 is in in Altium Designer? Also, which library is the SMA_DO-241AC (or similar package) in?...; dreambutterfly PCB Design

nRF51822 Part 2: [i=s]This post was last edited by cruelfox on 2021-4-17 15:49[/i]　　The Vidonn wristband I scrapped last time has many components on the board, but few GPIOs. I can't use so many external things at the...; cruelfox MCU

How to handle continuous response of keys in wince?: In this way, when the key is pressed, it responds once after a certain period of time, and does not respond after the key is lifted. It is just like the input effect of pressing a number key in Word. ...; cflymtk Embedded System

Is it good or bad to ask employees in your department to write a diary every day?: Or if your boss asked you to write a work log every day and submit it every week, what would your attitude be? Support? Proposal? Indifferent? What if you hold a weekly meeting? I want to see everyone...; flyingdsp Talking about work

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components