BGU6102
Wideband silicon low-noise amplifier MMIC
Rev. 3 — 13 July 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6102 MMIC is an unmatched wideband MMIC featuring an integrated bias,
enable function and wide supply voltage. BGU6102 is part of a family of three products
(BGU6101, BGU6102 and BGU6104) and is optimized for 2 mA operation.
1.2 Features and benefits
Supply voltage range from 1.5 V to 5 V
Current range up to 20 mA at 3 V and 40 mA at 5 V supply voltage
NF
min
of 0.7 dB
Applicable between 40 MHz and 4 GHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6
A
ESD protection on all pins up to 3 kV HBM
Small 6-pin leadless package 2.0 mm
1.3 mm
0.35 mm
1.3 Applications
FM radio
Mobile TV, CMMB
ISM
Wireless security
RKE, TPMS
AMR, ZigBee, Bluetooth
WiFi, WLAN (2.4 GHz)
Low current applications
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C; V
CC
= 3.0 V; I
CC(tot)
= 3.0 mA; V
ENABLE
1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol
s
21
2
Parameter
insertion power gain
Conditions
f = 450 MHz
f = 900 MHz
f = 2400 MHz; I
CC(tot)
= 6 mA
NF
min
minimum noise figure
f = 450 MHz
f = 900 MHz
f = 2400 MHz; I
CC(tot)
= 6 mA
Min Typ
-
-
-
-
-
-
18.5
16.5
14.0
0.7
0.8
1.2
Max Unit
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
NXP Semiconductors
BGU6102
Wideband silicon low-noise amplifier MMIC
Table 1.
Quick reference data
…continued
T
amb
= 25
C; V
CC
= 3.0 V; I
CC(tot)
= 3.0 mA; V
ENABLE
1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol
P
L(1dB)
Parameter
Conditions
Min Typ
-
-
-
-
-
-
5.0
5.5
0
5.5
6.0
11.5
Max Unit
-
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
dBm
output power at 1 dB gain f = 450 MHz
compression
f = 900 MHz
f = 2400 MHz; I
CC(tot)
= 6 mA
IP3
O
output third-order
intercept point
f = 450 MHz
f = 900 MHz
f = 2400 MHz; I
CC(tot)
= 6 mA
2. Pinning information
2.1 Pinning
1
2
3
6
5
4
Transparent top view
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
V
CC
n.c.
RF_IN
RF_OUT
ENABLE
CUR_ADJ
GND
Pin description
Pin
1
2
3
4
5
6
GND
Description
supply voltage
not connected
RF in
RF out
enable
current adjust
ground pad; RF and DC ground
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU6102
OM7809
OM7810
HXSON6
-
-
Description
Version
plastic thermal enhanced super thin small outline
SOT1209
package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm
50
LNA evaluation board
high-ohmic LNA evaluation board
-
-
Type number
BGU6102
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2012
2 of 20
NXP Semiconductors
BGU6102
Wideband silicon low-noise amplifier MMIC
4. Marking
Table 4.
BGU6102
Marking
Marking
1B*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
ENABLE
V
RF_IN
V
RF_OUT
I
CC(tot)
T
stg
T
j
V
ESD
Parameter
supply voltage
voltage on pin ENABLE
voltage on pin IN
voltage on pin RF_OUT
total supply current
storage temperature
junction temperature
electrostatic discharge voltage
Human Body Model (HBM); according to
JEDEC standard 22-A114E
Charged Device Model (CDM); according to
JEDEC standard 22-C101B
[1]
[2]
Conditions
RF input, AC coupled
[1]
Min
-
0.5
0.5
0.5
-
55
-
-
-
[2]
Max
5.5
V
CC
+ 1.8
+0.9
V
CC
+ 1.8
40
+150
150
3000
500
Unit
V
V
V
V
mA
C
C
V
V
DC
DC
V
CC
= 5.0 V
Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in order to avoid excess current.
The RF input is directly coupled to the base of the RF transistor.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
110
Unit
K/W
7. Static characteristics
Table 7.
Symbol
V
CC
I
CC(tot)
T
amb
[1]
[2]
Static characteristics
Parameter
supply voltage
total supply current
ambient temperature
Conditions
RF input, AC coupled
V
CC
= 3.0 V
V
ENABLE
0.4 V
[1][2]
[1]
Min
1.5
2.1
-
40
Typ
-
-
-
+25
Max
5.0
21
0.01
+85
Unit
V
mA
mA
C
I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
Configurable with external resistor.
BGU6102
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2012
3 of 20
NXP Semiconductors
BGU6102
Wideband silicon low-noise amplifier MMIC
8. Dynamic characteristics
Table 8.
Dynamic characteristics
T
amb
= 25
C; V
CC
= 3.0 V; V
ENABLE
1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
100 MHz frequency
s
21
2
insertion power gain
f = 100 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
MSG
maximum stable gain
f = 100 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
NF
min
minimum noise figure
f = 100 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
P
L(1dB)
output power at 1 dB gain compression
f = 100 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
IP3
O
output third-order intercept point
f = 100 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
-
-
-
-
-
3.0
5.5
10.5
14.5
19.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
-
-
-
-
-
6.0
4.5
0.5
4.0
9.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
-
-
-
-
-
0.8
0.7
0.8
0.8
1.0
-
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
29.0
31.0
33.5
35.5
37.5
-
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
16.0
19.5
24.5
28.0
31.5
-
-
-
-
-
dB
dB
dB
dB
dB
Conditions
Min Typ
Max Unit
BGU6102
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2012
4 of 20
NXP Semiconductors
BGU6102
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics
…continued
T
amb
= 25
C; V
CC
= 3.0 V; V
ENABLE
1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
150 MHz frequency
s
21
2
insertion power gain
f = 150 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
MSG
maximum stable gain
f = 150 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
NF
min
minimum noise figure
f = 150 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
P
L(1dB)
output power at 1 dB gain compression
f = 150 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
IP3
O
output third-order intercept point
f = 150 MHz
I
CC(tot)
= 2 mA
I
CC(tot)
= 3 mA
I
CC(tot)
= 6 mA
I
CC(tot)
= 10 mA
I
CC(tot)
= 20 mA
-
-
-
-
-
3.0
5.5
10.5
14.5
19.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
-
-
-
-
-
6.5
4.5
0.0
3.5
9.0
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
-
-
-
-
-
0.8
0.7
0.8
0.8
1.0
-
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
27.5
29.0
32.0
34.0
36.0
-
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
16.0
19.0
24.5
27.5
31.0
-
-
-
-
-
dB
dB
dB
dB
dB
Conditions
Min Typ
Max Unit
BGU6102
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2012
5 of 20
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