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HYB25D1G400AT-6

Description
DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
Categorystorage   
File Size3MB,85 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

HYB25D1G400AT-6 Overview

DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66

HYB25D1G400AT-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts66
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G66
length22.22 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals66
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256MX4
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
D a t a S he et , V 0. 5, J u l y 2 00 3
H Y B 25 D 1 G 4 0 0 A [ C / E / F / T ] ( L )
H Y B 25 D 1 G 8 0 0 A [ C / E / F / T ] ( L )
H Y B 25 D 1 G 1 6 0 A [ C / E / F / T ] ( L )
1 - G b i t D o u b l e D a ta R a t e S D R A M
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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