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BFU520A

Description
NPN Broadband Silicon RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size299KB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BFU520A Overview

NPN Broadband Silicon RF Transistor

BFU520A Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
highest frequency bandL BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.45 W
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10000 MHz
BFU520A
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23
package.
The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.7 dB at 900 MHz
Maximum stable gain 18 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CB
V
CE
V
EB
I
C
P
tot
h
FE
C
c
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector capacitance
transition frequency
T
sp
87
C
I
C
= 5 mA; V
CE
= 8 V
V
CB
= 8 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz
[1]
Conditions
open emitter
open base
shorted base
open collector
Min
-
-
-
-
-
-
60
-
-
Typ
-
-
-
-
5
-
95
0.53
10
Max
24
12
24
2
30
450
200
-
-
Unit
V
V
V
V
mA
mW
pF
GHz

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