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2SB929Q

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size242KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SB929Q Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN

2SB929Q Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB0929
(2SB929)
, 2SB0929A
(2SB929A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252, 2SD1252A
8.5
±0.2
Unit: mm
3.4
±0.3
1.0
±0.1
6.0
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
4.4
±0.5
Features
Parameter
Symbol
V
CBO
V
CEO
Rating
−60
−80
−60
−80
−5
−3
−5
35
Unit
V
2SB0929A
Collector-emitter voltage 2SB0929
(Base open)
2SB0929A
Emitter-base voltage (Collector open)
Collector current
V
(6.5)
V
EBO
I
C
I
CP
P
C
T
j
V
A
A
Peak collector current
1: Base
2: Collector
3: Emitter
N-G1 Package
Collector power dissipation
W
Note) Self-supported type package is also prepared.
T
a
=
25°C
1.3
Junction temperature
Storage temperature
150
°C
T
stg
−55
to
+150
°C
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CES
Collector-emitter voltage
(Base open)
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
2SB0929
Conditions
Min
−60
−80
Typ
Max
(7.6)
Collector-base voltage
(Emitter open)
Unit
V
I
C
= −30
mA, I
B
=
0
ue
2SB0929A
2SB0929
nt
in
V
CE
=
−60
V, V
BE
= 0
V
CE
=
−30
V, I
B
= 0
V
CE
=
−60
V, I
B
= 0
V
EB
=
−5
V, I
C
= 0
−200
µA
µA
2SB0929A
2SB0929
co
V
CE
=
−80
V, V
BE
= 0
−200
is
I
CEO
I
EBO
h
FE2
V
BE
f
T
−300
−300
−1
250
ce
Emitter-base cutoff current (Collector open)
/D
2SB0929A
mA
V
V
an
Forward current transfer ratio
h
FE1 *
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
70
10
en
ai
nt
Base-emitter voltage
V
CE
=
−4
V, I
C
=
−3
A
−1.8
−1.2
M
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
V
CE(sat)
t
on
I
C
= −3
A, I
B
= −0.375
A
I
C
= −1
A,
Pl
e
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
B1
= −
0.1 A, I
B2
= 0.1
A
V
CC
= −50
V
30
0.5
1.2
0.3
MHz
µs
µs
µs
t
stg
t
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: April 2003
Q
70 to 150
P
120 to 250
Note) The part number in the parenthesis shows conventional part number.
SJD00011BED
(1.5)
2SB0929
2.0
±0.5
Absolute Maximum Ratings
T
C
=
25°C
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
4.4
±0.5
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector-emitter saturation voltage V
CE(sat)
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
±0.3
1.5
±0.1
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1

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Description Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN
Maker Panasonic Panasonic Panasonic Panasonic
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N
Maximum collector current (IC) 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 60 V 60 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 120 120 70
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 35 W 35 W 35 W 35 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz
Base Number Matches 1 1 1 1
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