Power Transistors
2SB0930
(2SB930)
, 2SB0930A
(2SB930A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253, 2SD1253A
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory linearity
•
Low collector-emitter saturation voltage V
CE(sat)
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
±0.3
1.5
±0.1
Unit: mm
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
4.4
±0.5
Parameter
Collector-base voltage
(Emitter open)
2SB0930
2SB0930A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25°C
T
j
T
stg
Rating
−60
−80
−60
−80
−5
−4
−8
40
1.3
150
−55
to
+150
Unit
V
1
2
2.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Collector-emitter voltage 2SB0930
(Base open)
2SB0930A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
(6.5)
V
A
A
W
°C
°C
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
2SB0930
2SB0930A
2SB0930
2SB0930A
2SB0930
2SB0930A
I
EBO
h
FE1 *
h
FE2
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
I
CES
V
CE
=
−60
V, V
BE
= 0
V
CE
=
−80
V, V
BE
= 0
V
CE
=
−30
V, I
B
= 0
V
CE
=
−60
V, I
B
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
V
CE
=
−4
V, I
C
=
−3
A
I
C
= −4
A, I
B
= −0.4
A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −4
A,
I
B1
= −
0.4 A, I
B2
= 0.4
A
V
CC
= −50
V
20
0.2
0.5
0.2
70
15
−2.0
−1.5
V
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
−400
−400
−700
−700
−1
250
mA
µA
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: April 2003
Q
70 to 150
P
120 to 250
Note) The part number in the parenthesis shows conventional part number.
SJD00012BED
(7.6)
(1.5)
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1
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and semiconductors described in this material
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(4) The products described in this material are intended to be used for standard applications or general
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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