Power Transistors
2SB0932
(2SB932)
Silicon PNP epitaxial planar type
For Power switching
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
±0.3
1.5
±0.1
■
Features
4.4
±0.5
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Rating
−130
−80
−7
−4
−8
35
Unit
V
V
Collector-base voltage (Emitter open)
(6.5)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
V
A
A
Peak collector current
1: Base
2: Collector
3: Emitter
N-G1 Package
Collector power dissipation
W
Note) Self-supported type package is also prepared.
T
a
=
25°C
1.3
Junction temperature
Storage temperature
150
°C
T
stg
−55
to
+150
°C
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage (Base open)
Conditions
Min
−80
Typ
Max
−10
(7.6)
Unit
V
µA
V
I
C
= −10
mA, I
B
=
0
V
EB
= −5
V, I
C
=
0
sc
on
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
V
CB
= −100
V, I
E
=
0
−50
260
µA
e/
Di
Forward current transfer ratio
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −1
A
I
C
= −3
A, I
B
= −
0.15 A
I
C
= −3
A, I
B
= −
0.15 A
I
C
= −1
A,
45
na
nc
h
FE2 *
90
Base-emitter voltage
V
BE(sat)
f
T
−1.5
te
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
t
on
−
0.5
V
ain
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
B1
= −
0.1 A, I
B2
=
0.1 A
V
CC
= −50
V
30
MHz
µs
µs
Storage time
Fall time
M
Turn-on time
0.15
0.8
t
stg
t
f
0.15
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00014BED
(1.5)
■
Absolute Maximum Ratings
T
C
=
25°C
tin
ue
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
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ct
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.
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2.0
±0.5
2.54
±0.3
1.4
±0.1
5.08
±0.5
0.8
±0.1
R = 0.5
R = 0.5
1.0
±0.1
0.4
±0.1
1
2
3
(8.5)
(6.0)
1.3
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1
2SB0932
P
C
T
a
40
(1)
(1)T
C
=
T
a
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
(3)Without heat sink
(P
C
=
1.3 W)
−6
I
C
V
CE
I
B
= −100
mA T
C
=
25°C
−90
mA
−80
mA
−70
mA
−60
mA
−50
mA
−40
mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
20
Collector power dissipation P
C
(W)
−5
Collector current I
C
(A)
30
−10
−4
M
Di ain
sc te
on na
tin nc
ue e/
d
20
−3
−30
mA
−1
−2
−20
mA
−8
mA
25°C
T
C
=
100°C
−25°C
10
−
0.1
(2)
(3)
0
0
40
80
120
160
Ambient temperature T
a
(°C)
V
BE(sat)
I
C
−100
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
20
−10
−1
T
C
= −25°C
100°C
25°C
−
0.1
−
0.01
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
C
ob
V
CB
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
na
nc
I
E
=
0
f
=
1 MHz
T
C
=
25°C
Collector current I
C
(A)
1 0
3
10
2
10
1
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
2
tin
ue
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
−1
−5
mA
0
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
−10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
C
10
4
V
CE
= −2
V
10
4
Forward current transfer ratio h
FE
V
CE
= −10
V
f
=
10 MHz
T
C
=
25°C
10
3
Transition frequency f
T
(MHz)
10
3
T
C
=
100°C
25°C
10
2
−25°C
10
2
10
10
1
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
sc
on
t
on
, t
stg
, t
f
I
C
Safe operation area
Di
100
10
te
Pulsed t
W
=
1 ms
Duty cycle
=
1%
I
C
/ I
B
=
30
(−I
B1
=
I
B2
)
V
CC
= −50
V
T
C
=
25°C
−100
e/
Non repetitive pulse
T
C
=
25°C
−10
I
CP
I
C
ain
t
=
10 ms
t
=
0.5 ms
t
=
1 ms
M
1
t
stg
−1
DC
t
on
t
f
0.1
−
0.1
0.01
0
−
0.8
−1.6
−2.4
−3.2
−
0.01
−1
−10
−100
−1
000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
SJD00014BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
tin
ue
Pl
pla d in
ea
ne clu
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:// ol d d d nte inte llow
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w. n n n e c
se g U tin tin t e fou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
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/e a
n/ tio
.
n.
M
ain
te
na
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M
Di ain
sc te
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Di
sc
on
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