Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1133/1134
APPLICATIONS
・Low
frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
电半
固
IN
PARAMETER
Collector-base voltage
导½
CONDITIONS
Open emitter
2SB857
V
CEO
Collector-emitter voltage
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Emitter-base voltage
Collector current
ANG
CH
2SB858
MIC
E SE
Open base
Open collector
OR
UCT
ND
O
VALUE
-70
-50
-60
-5
-4
-8
UNIT
V
V
V
A
A
W
℃
℃
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
40
150
-45~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB857
I
C
=-50mA; R
BE
=∞
2SB858
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
DC current gain
I
C
=-10μA; I
E
=0
I
E
=-10μA; I
C
=0
I
C
=-2 A;I
B
=-0.2 A
I
C
=-1A ; V
CE
=-4V
V
CB
=-50V; I
E
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-0.1A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-4V
CONDITIONS
2SB857 2SB858
MIN
-50
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-60
-70
-5
-1.0
-1.0
-1
60
35
320
V
V
V
V
μA
电半
固
IN
C
100-200
DC current gain
Transition frequency
导½
D
h
FE-1
classifications
B
60-120
ANG
CH
160-320
MIC
E SE
OR
UCT
ND
O
15
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB857 2SB858
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4
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