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2SJ550(S)-(2)

Description
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size64KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SJ550(S)-(2) Overview

TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-263AB

2SJ550(S)-(2) Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Reach Compliance Codecompliant
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)15 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)50 W
surface mountYES
Base Number Matches1
2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-633A (Z)
2nd. Edition
Jul. 1998
Features
Low on-resistance
R
DS(on)
= 0.075Ω typ.
Low drive current.
4V gate drive devices.
High speed switching.
Outline
LDPAK
4
4
D
1
1
2
3
G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S

2SJ550(S)-(2) Related Products

2SJ550(S)-(2) 2SJ550(S)-(1)
Description TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-263AB TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-263ABVAR
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant compliant
Is Samacsys N N
Configuration Single Single
Maximum drain current (Abs) (ID) 15 A 15 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W
surface mount YES YES
Base Number Matches 1 1
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