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2SK1401

Description
15A, 300V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size78KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SK1401 Overview

15A, 300V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN

2SK1401 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeTO-3P
package instructionTO-3P, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage300 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1401, 2SK1401A
Silicon N Channel MOS FET
REJ03G0941-0200
(Previous: ADE-208-1281)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
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