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BYM600A170DN2

Description
Rectifier Diode, 1 Phase, 1 Element, 600A, Silicon
CategoryDiscrete semiconductor    diode   
File Size81KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BYM600A170DN2 Overview

Rectifier Diode, 1 Phase, 1 Element, 600A, Silicon

BYM600A170DN2 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PUFM-X5
Reach Compliance Codeunknown
Is SamacsysN
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PUFM-X5
Maximum non-repetitive peak forward current1200 A
Number of components1
Phase1
Number of terminals5
Maximum output current600 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum power dissipation1400 W
Certification statusNot Qualified
Maximum reverse recovery time1 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
BYM 600 A 170 DN2
Diode Power Module
Preliminary data
• Inside fast free-wheeling diode
• Package with insulated metal base plate
• Diode especially for brake choppers
• matched with BSM 300 GA 170 DN 2 E 3166
Type
BYM 600 A 170 DN2
Maximum Ratings
Parameter
Diode reverse voltage
V
R25
I
FDC
Package
SINGLE DIODE 1
Ordering Code
C67070-A2902-A67
1700V 600A
Symbol
Values
1700
Unit
V
A
V
R25
I
FDC
600
400
T
j
= 25 °C
DC current
T
C
= 25 °C
T
C
= 80 °C
Pulsed diode current,
t
p
= 1 ms
I
Fpuls
1200
800
T
C
= 25 °C
T
C
= 80 °C
i
2
t-value, t
P
= 10 ms
T
j
= 0 °C
Power dissipation per diode
∫i
2
t
96800
A
2
s
W
1400
+ 150
-55 ... + 150
0.09
4000
20
11
F
55 / 150 / 56
Jan-09-1997
sec
K/W
Vac
mm
°C
P
D
T
j
T
stg
R
thJC
V
is
-
-
-
-
1
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group

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