BYM 600 A 170 DN2
Diode Power Module
Preliminary data
• Inside fast free-wheeling diode
• Package with insulated metal base plate
• Diode especially for brake choppers
• matched with BSM 300 GA 170 DN 2 E 3166
Type
BYM 600 A 170 DN2
Maximum Ratings
Parameter
Diode reverse voltage
V
R25
I
FDC
Package
SINGLE DIODE 1
Ordering Code
C67070-A2902-A67
1700V 600A
Symbol
Values
1700
Unit
V
A
V
R25
I
FDC
600
400
T
j
= 25 °C
DC current
T
C
= 25 °C
T
C
= 80 °C
Pulsed diode current,
t
p
= 1 ms
I
Fpuls
1200
800
T
C
= 25 °C
T
C
= 80 °C
i
2
t-value, t
P
= 10 ms
T
j
= 0 °C
Power dissipation per diode
∫i
2
t
96800
A
2
s
W
1400
+ 150
-55 ... + 150
≤
0.09
4000
20
11
F
55 / 150 / 56
Jan-09-1997
sec
K/W
Vac
mm
°C
P
D
T
j
T
stg
R
thJC
V
is
-
-
-
-
1
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
BYM 600 A 170 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Free-Wheel Diodes
Diode forward voltage
V
F
-
-
2
1.8
1.1
4.4
2.5
-
V
I
F
= 300 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 300 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse current
I
R
-
-
1.6
-
mA
V
CA
= 1700 V,
T
j
= 25 °C
V
CA
= 1700 V,
T
j
= 125 °C
Reverse recovery time
t
rr
-
1
-
µs
I
F
= 300 A,
V
R
= -1200 V,
V
GE
= 0 V
di
F
/dt = -1500 A/µs,
T
j
= 125 °C
Reverse recovery charge
Q
rr
µC
I
F
= 300 A,
V
R
= -1200 V,
V
GE
= 0 V
di
F
/dt = -1500 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
33
100
-
-
Semiconductor Group
2
Jan-09-1997