74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
Rev. 04 — 20 July 2007
Product data sheet
1. General description
The 74HC1G126 and 74HCT1G126 are high-speed, Si-gate CMOS devices. They
provide one non-inverting buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at pin OE causes the output as
assume a high-impedance OFF-state.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The bus driver output currents are equal to those of the 74HC126 and 74HCT126.
2. Features
I
I
I
I
I
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC1G126GW
74HCT1G126GW
74HC1G126GV
74HCT1G126GV
−40 °C
to +125
°C
SC-74A
−40 °C
to +125
°C
TSSOP5
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
4. Marking
Table 2.
Marking codes
Marking
HN
TN
H26
T26
Type number
74HC1G126GW
74HCT1G126GW
74HC1G126GV
74HCT1G126GV
NXP Semiconductors
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
5. Functional diagram
2
1
A
OE
Y
4
2
4
1
OE
A
Y
OE
mna125
mna126
mna127
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
74HC1G126
74HCT1G126
OE
A
1
2
5
V
CC
GND
3
001aaf103
4
Y
Fig 4. Pin configuration
6.2 Pin description
Table 3.
Symbol
OE
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
output enable input
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state
Inputs
OE
H
H
L
A
L
H
X
Output
Y
L
H
Z
74HC_HCT1G126_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 20 July 2007
2 of 12
NXP Semiconductors
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
Min
−0.5
-
-
-
-
−70
−65
Max
+7.0
±20
±20
±35.0
70
-
+150
200
Unit
V
mA
mA
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
74HC1G126
Typ
5.0
-
-
+25
-
-
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
−40
-
-
-
74HCT1G126
Typ
5.0
-
-
+25
-
-
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
Parameter
Conditions
−40 °C
to +85
°C
Min
For type 74HC1G126
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
−40 °C
to +125
°C
Min
Max
Unit
74HC_HCT1G126_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 20 July 2007
3 of 12
NXP Semiconductors
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
V
OH
Parameter
HIGH-level output
voltage
Conditions
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−6.0
mA; V
CC
= 4.5 V
I
O
=
−7.8
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
I
OZ
I
CC
C
I
V
IH
V
IL
V
OH
input leakage current
OFF-state output
current
supply current
input capacitance
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
−20 µA
I
O
=
−6.0
mA
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
µA
I
O
= 6.0 mA
I
I
I
OZ
I
CC
∆I
CC
C
I
input leakage current
OFF-state output
current
supply current
additional supply
current
input capacitance
V
I
= V
CC
or GND; V
CC
= 5.5 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
or
GND; V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
−
2.1 V; I
O
= 0 A
-
-
-
-
-
-
-
0
0.16
-
-
-
-
1.5
0.1
0.33
1.0
5
10
500
-
-
-
-
-
-
-
-
0.1
0.4
1.0
10
20
850
-
µA
µA
pF
V
V
µA
4.4
3.84
4.5
4.32
-
-
4.4
3.7
-
-
V
V
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
or
GND; V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
-
2.0
-
0
0
0
0.15
0.16
-
-
-
1.5
1.6
1.2
0.1
0.1
0.1
0.33
0.33
1.0
5
10
-
-
0.8
-
-
-
-
-
-
-
-
-
2.0
-
0.1
0.1
0.1
0.4
0.4
1.0
10
20
-
-
0.8
V
V
V
V
V
µA
µA
µA
pF
V
V
1.9
4.4
5.9
3.84
5.34
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
−40 °C
to +85
°C
Min
Typ
Max
−40 °C
to +125
°C
Min
Max
Unit
For type 74HCT1G126
74HC_HCT1G126_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 20 July 2007
4 of 12
NXP Semiconductors
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
≤
6.0 ns; C
L
= 50 pF unless otherwise specified. All typical values are measured at T
amb
= 25
°
C. For test
circuit see
Figure 7
Symbol Parameter
For type 74HC1G126
t
pd
propagation delay A to Y; see
Figure 5
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
en
enable time
OE to Y; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
dis
disable time
OE to Y; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[2]
[1]
[1]
[1]
Conditions
−40 °C
to +85
°C
Min
Typ
Max
−40 °C
to +125
°C
Unit
Min
Max
-
-
-
-
-
-
-
-
-
-
-
24
10
9
9
24
10
8
16
12
11
30
125
25
-
21
155
31
26
155
31
26
-
-
-
-
-
-
-
-
-
-
-
-
150
30
-
26
190
38
32
190
38
32
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
For type 74HCT1G126
t
pd
propagation delay A to Y; see
Figure 5
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
t
en
t
dis
C
PD
enable time
disable time
power dissipation
capacitance
OE to Y; see
Figure 6;
V
CC
= 4.5 V
OE to Y; see
Figure 6;
V
CC
= 4.5 V
V
I
= GND to V
CC
−
1.5 V
[1]
[1]
[2]
[1]
-
-
-
-
-
11
10
10
12
27
30
-
35
31
-
-
-
-
-
-
36
-
42
38
-
ns
ns
ns
ns
pF
[1]
t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[2]
C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs
74HC_HCT1G126_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 20 July 2007
5 of 12
京公网安备 11010802033920号
EEWORLD
