BAP55L
Silicon PIN diode
Rev. 2 — 5 September 2011
Preliminary data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD882 leadless ultra small plastic SMD package.
1.2 Features and benefits
High speed switching for RF signals
Low diode capacitance
Low forward resistance
Very low series inductance
For applications up to 3 GHz
1.3 Applications
RF attenuators and switches
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym006
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2.
Ordering information
Name
BAP55L
-
Description
leadless ultra small plastic package; 2 terminals; body
1.0
0.6
0.5 mm
Version
SOD882
Type number Package
NXP Semiconductors
BAP55L
Silicon PIN diode
4. Marking
Table 3.
BAP55L
Marking
Marking code
E6
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
C
Conditions
Min
-
-
-
65
65
Max
50
100
500
+150
+150
Unit
V
mA
mW
C
C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
100
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 20 V
V
R
= 50 V
f = 1 MHz;
Figure 2
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
r
D
diode forward
resistance
f = 100 MHz;
Figure 1
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
-
-
-
-
3.4
2.3
0.8
0.4
4.5
3.3
1.2
0.7
-
-
-
0.27
0.23
0.18
-
-
0.28
pF
pF
pF
Min
-
-
-
Typ
0.95
-
-
Max
1.1
10
0.1
Unit
V
nA
A
BAP55L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Preliminary data sheet
Rev. 2 — 5 September 2011
2 of 9
NXP Semiconductors
BAP55L
Silicon PIN diode
Table 6.
Characteristics
…continued
T
j
= 25
C unless otherwise specified.
Symbol Parameter
s
12
2
isolation
Conditions
V
R
= 0 V;
Figure 4
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
s
21
2
insertion loss
I
F
= 0.5 mA;
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
I
F
= 1 mA;
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
I
F
= 10 mA;
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
I
F
= 100 mA;
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
charge carrier life
time
when switched from
I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
;
measured at
I
R
= 3 mA
-
-
-
-
0.05
0.07
0.09
0.28
-
-
-
-
dB
dB
dB
s
-
-
-
0.07
0.09
0.12
-
-
-
dB
dB
dB
-
-
-
0.17
0.19
0.21
-
-
-
dB
dB
dB
-
-
-
0.25
0.27
0.29
-
-
-
dB
dB
dB
-
-
-
17.6
13
11.1
-
-
-
dB
dB
dB
Min
Typ
Max
Unit
L
S
series inductance
-
0.6
-
nH
BAP55L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Preliminary data sheet
Rev. 2 — 5 September 2011
3 of 9
NXP Semiconductors
BAP55L
Silicon PIN diode
10
2
r
D
(Ω)
10
001aac628
400
C
d
(fF)
300
001aac629
200
1
100
10
−1
10
−1
1
10
I
F
(mA)
10
2
0
0
5
10
15
V
R
(V)
20
f = 100 MHz; T
j
= 25
C.
f = 1 MHz; T
j
= 25
C.
Fig 1.
Forward resistance as a function of forward
current; typical values
0
001aac630
(1)
(2)
(3)
(4)
Fig 2.
Diode capacitance as a function of reverse
voltage; typical values
0
001aac631
|S
21
|
2
(dB)
−0.25
|S
12
|
2
(dB)
−10
−0.50
−20
−0.75
−30
−1.00
0
1
2
f (MHz)
3
−40
0
1
2
f (MHz)
3
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
C.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Fig 3.
Insertion loss (s
21
2
) of the diode as a function
of frequency; typical values
Fig 4.
Isolation (s
12
2
) of the diode as a function of
frequency; typical values
BAP55L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Preliminary data sheet
Rev. 2 — 5 September 2011
4 of 9
NXP Semiconductors
BAP55L
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
L
L
1
2
b
e1
A
A1
E
D
(2)
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
0.50
0.46
A
1
max.
0.03
b
0.55
0.47
D
0.62
0.55
E
1.02
0.95
e
1
0.65
L
0.30
0.22
0.5
scale
1 mm
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
SOD882
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16
03-04-17
Fig 5.
BAP55L
Package outline SOD882
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Preliminary data sheet
Rev. 2 — 5 September 2011
5 of 9
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