DISCRETE SEMICONDUCTORS
DATA SHEET
BLU60/12
UHF power transistor
Product specification
March 1986
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor in SOT-119 envelope
primarily intended for use in mobile
radio transmitters in the 470 MHz
communications band.
FEATURES
•
multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
•
internal matching to achieve an
optimum wideband capability and
high power gain.
•
gold metallization ensures
excellent reliability.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°C
in a common-emitter class-B circuit
MODE OF OPERATION
narrow band; c.w.
V
CE
V
12,5
f
MHz
470
P
L
W
60
G
p
dB
>
4,4
BLU60/12
The transistor has a 6-lead flange
envelope with a ceramic cap. All
leads are isolated from the flange.
η
C
%
>
55
PIN CONFIGURATION
PINNING
PIN
1
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
handbook, halfpage
1
2
2
3
4
5
6
3
4
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1986
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation
at T
mb
= 25
°C;
f
>
1 MHz
Storage temperature
Operating junction temperature
P
tot
T
stg
T
j
max.
max.
I
C
I
CM
max.
max.
V
CBOM
V
CEO
V
EBO
max.
max.
max.
BLU60/12
36 V
16,5 V
4 V
12 A
36 A
110 W
200
°C
−65
to
+
150
°C
handbook, halfpage
200
Prf
MDA345
(W)
150
100
II
I
50
0
0
40
80
120
160
200
Th (
°C)
I Continuous operation (f > 1 MHz).
II Short-time operation during mismatch (f > 1 MHz).
Fig.2 Power/temperature derating curves.
MAXIMUM THERMAL RESISTANCE
Dissipation = 72 W; T
amb
= 25
°C
From junction to mounting base (r.f. operation)
From mounting base to heatsink
R
th j-mb
R
th mb-h
max.
max.
1,4 K/W
0,2 K/W
March 1986
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 100 mA
Collector-emitter breakdown voltage
open base; I
C
= 200 mA
Emitter-base breakdown voltage
open collector; I
E
= 20 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
Ω
D.C. current gain
V
CE
= 10 V; I
C
= 8 A
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12,5 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12,5
Collector-flange capacitance
C
re
C
cf
C
c
h
FE
E
SBR
I
CES
V
(BR)EBO
V
(BR)CEO
V
(BR)CBO
BLU60/12
min.
min.
min.
max.
min.
min.
typ.
typ.
typ.
typ.
36 V
16,5 V
4 V
44 mA
15 mJ
15
60
170 pF
100 pF
3 pF
handbook, halfpage
100
MDA336
handbook, halfpage
400
Cc
MDA337
hFE
80
VCE = 12.5 V
10 V
(pF)
300
60
200
40
100
20
0
0
10
20
30
IC (A)
40
0
0
4
8
12
16
20
VCB (V)
Fig.3
D.C. current gain versus collector current;
T
j
= 25
°C.
Fig.4
Output capacitance versus V
CB
; I
E
= i
e
= 0;
f = 1 MHz.
March 1986
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
R.F. performance at T
h
= 25
°C
in a common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
12,5
f
MHz
470
P
L
W
60
G
p
dB
>
4,4
typ. 5,5
BLU60/12
η
C
%
>
55
typ. 62
narrow band; c.w.
handbook, full pagewidth
C1
50
Ω
C3
C2
,,,, ,,,,,
,,,,
L5
C7
C12
L6
C5
D.U.T.
L1
L2
C6
C4
L7
C8
L3
R1
L4
C9
L8
R2
+V
CC
C10
MDA338
C13
50
Ω
C11
Fig.5 Class-B test circuit at f = 470 MHz.
List of components:
C1 = C13 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = 12 pF multilayer ceramic chip capacitor
(1)
C4 = C5 = 8, 2 pF multilayer ceramic chip capacitor
(2)
C6 = C7 = 15 pF multilayer ceramic chip capacitor
(1)
C8 = 110 pF multilayer ceramic chip capacitor
(1)
C9 = 3
×
100 nF multilayer ceramic chip capacitor in parallel
C10 = 2,2
µF
(35 V) electrolytic capacitor
C12 = 5,6 pF multilayer ceramic chip capacitor
(1)
L1 = 34,6
Ω
stripline (17 mm
×
4 mm)
L2 = L5 = 25,3 stripline (6 mm
×
6 mm)
L3 = 45 nH; 4 turns, closely wound enamelled Cu-wire (0,5 mm); int. dia. 2,5 mm; leads 2
×
5 mm
L4 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L6 = 29,2
Ω
stripline (25,5 mm
×
5 mm)
L7 = 10 nH; 1 turn Cu-wire (1,0 mm); int. dia. 5 mm; leads 2
×
5 mm
R1 = 1
Ω ±
5% (0,4 W) metal film resistor
R2 = 10
Ω ±
5% (1,0 W) metal film resistor
Notes
1. American Technical Ceramics capacitor type B or capacitor of the same quality.
2. Idem type A.
March 1986
5
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