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BLF900-110

Description
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power
CategoryDiscrete semiconductor    The transistor   
File Size138KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BLF900-110 Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power

BLF900-110 Parametric

Parameter NameAttribute value
MakerNXP
package instructionCERAMIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage75 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF900-110; BLF900S-110
Base station LDMOS transistors
Product specification
Supersedes data of 2003 Sep 22
2004 Feb 04

BLF900-110 Related Products

BLF900-110 BLF900S-110
Description TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power
Maker NXP NXP
package instruction CERAMIC PACKAGE-3 FLATPACK, R-CDFP-F3
Contacts 3 3
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 75 V 75 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F3 R-CDFP-F3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLATPACK
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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