DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-30
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Dec 19
2003 Feb 24
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
Typical W-CDMA performance at a supply voltage of
28 V and I
DQ
of 240 mA:
– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR =
−45
dBc at 3.84 MHz
– d
im
=
−42
dBc
•
Easy power control
•
Excellent ruggedness
•
High power gain
•
Excellent thermal stability
•
Designed for broadband operation (2000 to 2200 MHz)
•
Internally matched for ease of use.
2
1
BLF2022-30
PINNING - SOT608A
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
3
APPLICATIONS
•
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB
two-carrier W-CDMA test
model 1, 64 channels
f
(MHz)
f
1
= 2170; f
2
= 2170.1
f
1
= 2155; f
2
= 2165
V
DS
(V)
28
28
I
DQ
(mA)
240
270
P
L
(W)
Top view
MBL290
Fig.1 Simplified outline (SOT608A).
G
p
(dB)
12.6
12.9
η
D
(%)
34.3
16.5
d
im
(dBc)
−29.5
−42
ACLR
5
(dBc)
−
−45
30 (PEP)
3.5 (AV)
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
PARAMETER
−
−
−
−65
−
MIN.
BLF2022-30
MAX.
65
±15
4.5
+150
200
V
V
A
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
Notes
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 0.7 mA
V
DS
= 10 V; I
D
= 70 mA
V
GS
= 0; V
DS
= 28 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 2.5 A
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
4.5
−
9
−
−
−
−
TYP.
−
−
−
−
−
2
0.3
1.7
MAX.
−
5.5
5
−
11
−
−
−
UNIT
V
V
µA
A
nA
S
Ω
pF
PARAMETER
CONDITIONS
VALUE
1.85
UNIT
K/W
thermal resistance from junction to heatsink T
h
= 25
°C;
note 1
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th j-c
= 1.85 K/W; unless otherwise specified.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
f
1
= 2170; f
2
= 2170.1
V
DS
(V)
28
I
DQ
(mA)
240
P
L
(W)
30 (PEP)
G
p
(dB)
>11
η
D
(%)
>30
d
im
(dBc)
≤−25
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 28 V; I
DQ
= 240 mA; P
L
= 30 W; f = 2170 MHz.
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
handbook, halfpage
15
MLD935
60
MLD936
handbook, halfpage
0
Gp
(dB)
10
Gp
η
D
(%)
40
dim
(dBc)
−20
d3
d5
−40
d7
η
D
5
20
−60
0
0
10
20
30
40
50
PL (PEP) (W)
0
−80
0
10
20
30
40
50
PL (PEP) (W)
V
DS
= 28 V; I
DQ
= 240 mA; T
h
≤
25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
V
DS
= 28 V; I
DQ
= 240 mA; T
h
≤
25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
(1)
(2)
15
MLD937
60
MLD938
handbook, halfpage
0
Gp
(dB)
10
(3)
Gp
η
D
(%)
40
dim
(dBc)
−20
η
D
(4)
(5)
(6)
(1)
−40
(2)
(3)
5
20
−60
0
0
10
20
30
40
50
PL (PEP) (W)
0
−80
0
10
20
30
40
50
PL (PEP) (W)
V
DS
= 28 V; T
h
≤
25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
(1) I
DQ
= 290 mA.
(2) I
DQ
= 240 mA.
(3) I
DQ
= 190 mA.
(4) I
DQ
= 190 mA.
(5) I
DQ
= 240 mA.
(6) I
DQ
= 290 mA.
V
DS
= 28 V; T
h
≤
25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
(1) I
DQ
= 190 mA.
(2) I
DQ
= 240 mA.
(3) I
DQ
= 290 mA.
Fig.4
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2003 Feb 24
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
handbook, halfpage
15
MLD940
30
handbook, halfpage
0
MLD941
0
ACLR
(dBc)
−20
Gp
(dB)
10
Gp
η
D
(%)
20
dim
(dBc)
−20
η
D
5
10
−40
dim
ACLR
−40
0
0
2
4
6
0
8
10
PL (AV) (W)
−60
0
2
4
6
−60
10
PL (AV) (W)
8
Two-carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 270 mA; T
h
≤
25
°C;
f
1
= 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Two-carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 270 mA; T
h
≤
25
°C;
f
1
= 2155 MHz;
f
1
= 2165 MHz;.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Fig.7
Fig.6
Power gain and drain efficiency as functions
of average load power; typical values.
Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
2003 Feb 24
5
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