IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT151-500RT
SCR
14 March 2014
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic
package intended for use in applications requiring good bidirectional blocking voltage
capability, high surge current capability, high junction temperature capability and high
thermal cycling performance.
2. Features and benefits
•
•
•
•
•
Good bidirectional blocking voltage capability
High junction operating temperature capability
High surge current capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
3. Applications
•
•
•
•
•
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
T
j
I
T(RMS)
junction temperature
RMS on-state current
half sine wave; T
mb
≤ 133 °C;
Fig. 1;
Fig. 2; Fig. 3
-
-
-
-
150
12.5
°C
A
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
500
500
132
120
Unit
V
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20A
B
NXP Semiconductors
BT151-500RT
SCR
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 6
Min
-
Typ
2
Max
15
Unit
mA
Static characteristics
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
A
G
A
cathode
anode
gate
mounting base; connected to
anode
Simplified outline
mb
Graphic symbol
A
G
sym037
K
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT151-500RT
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
mb
≤ 133 °C
half sine wave; T
mb
≤ 133 °C;
Fig. 1;
Fig. 2; Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
BT151-500RT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Conditions
Min
-
-
-
-
-
-
Max
500
500
8
12.5
132
120
Unit
V
V
A
A
A
A
Product data sheet
14 March 2014
2 / 11
NXP Semiconductors
BT151-500RT
SCR
Symbol
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
30
2
Parameter
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
Conditions
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
Min
-
-
-
-
-
Max
72
50
4
5
5
1
150
150
003aad206
Unit
A s
A/µs
A
V
W
W
°C
°C
2
over any 20 ms period
-
-40
-
003a a d205
I
T(RMS )
(A)
25
20
15
10
16
I
T(RMS)
(A)
12
133 °C
8
4
5
0
10
-2
10
-1
1
10
s urge duratio n (s )
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz; T
mb
= 133 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
BT151-500RT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 March 2014
3 / 11
NXP Semiconductors
BT151-500RT
SCR
15
P
tot
(W)
2.2
10
4.0
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
003aad202
130.5
T
mb(max)
(°C)
a = 1.57
1.9
2.8
137
5
143.5
0
0
2
4
6
I
T(AV)
(A)
8
150
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of average on-state current; maximum values
003aad203
160
I
TSM
(A)
120
80
I
T
I
TSM
40
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151-500RT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 March 2014
4 / 11
京公网安备 11010802033920号
EEWORLD
