Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
3.0
1.55
300
MAX.
1500
800
5
8
32
3
-
1.9
400
UNIT
V
V
A
A
W
V
A
V
ns
T
hs
≤
25 ˚C
I
C
= 3.0 A; I
B
= 0.75 A
f = 16 kHz
I
F
= 3.0 A
I
Csat
= 3.0 A;f = 16 kHz
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
32
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.9
-
UNIT
K/W
K/W
1
Turn-off current.
January 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
BV
EBO
V
CEOsust
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
I
B
= 600 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
V
EB
= 6 V
I
C
= 3.0 A; I
B
= 0.75 A
I
C
= 3.0 A; I
B
= 0.75 A
I
C
= 0.5 A; V
CE
= 5 V
I
C
= 3A; V
CE
= 5 V
I
F
= 3.0 A
MIN.
-
-
7.5
800
-
-
0.8
-
4.2
-
TYP.
-
-
13.5
-
30
-
0.89
7
5.5
1.55
MAX.
1.0
2.0
-
-
-
3.0
0.98
-
7.3
1.9
UNIT
mA
mA
V
V
Ω
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
CONDITIONS
I
Csat
= 3.0 A; I
B1
= 0.6 A; (I
B2
= -1.5 A)
3.7
300
I
F
= 3 A; dI
F
/dt = 50 A/µs
V
F
= 5 V
19
400
4.5
400
-
-
µs
ns
V
ns
TYP.
MAX.
UNIT
t
s
t
f
V
fr
t
fr
2
Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IB1
t
20us
26us
64us
VCE
IB2
D.U.T.
IBend
LB
Cfb
Rbe
-VBB
t
Fig.1. Switching times waveforms (16 kHz).
Fig.4. Switching times test circuit.
ICsat
90 %
IC
100
hFE
VCE = 1V
BU4506DF/X/Z
Ths = 25 C
Ths = 85 C
10 %
tf
ts
IB
IB1
t
10
t
1
0.01
- IB2
0.1
1
IC / A
10
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain.
I
F
I
F
100
hFE
VCE = 5V
BU4506DF/X/Z
Ths = 25 C
Ths = 85 C
10%
t fr
V
F
time
10
5V
V
F
time
V
fr
1
0.01
0.1
1
IC / A
10
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.6. High and low DC current gain.
January 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
1
VCESAT / V
Ths = 25 C
Ths = 85 C
BU4506DF/X/Z
120
110
100
90
80
70
60
50
PD%
Normalised Power Derating
with heatsink compound
0.8
0.6
0.4
IC/IB = 5
40
30
20
10
0
0.2
0
0.1
0
1
IC / A
10
20
40
60
80
Ths / C
100
120
140
Fig.7. Typical collector-emitter saturation voltage.
Fig.10. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
VBESAT / V
1.2
BU4506DF/X/Z
Ths = 25 C
Ths = 85 C
Zth (K/W)
10
0.5
BU4506DZ
1.1
1
1
0.2
0.1
0.05
0.02
0.9
IC = 3 A
0.1
P
D
tp
D = tp/T
0.8
0.01
D=0
0.7
T
0.001
1E-06
1E-05
1E-04
1E-03 1E-02
t/s
t
0.6
0
1
2
3
IB / A
4
1E-01 1E+00 1E+01
Fig.8. Typical base-emitter saturation voltage.
Fig.11. Transient thermal impedance.
10
ts/tf/ us
BU4506D ts/tf
8
ICsat = 3 A
Ths = 85 C
Freq = 16 kHz
6
4
2
0
0
0.5
1
1.5
IB / A
2
Fig.9. Typical collector storage and fall time.
I
C
=3 A; T
j
= 85˚C; f = 16kHz
January 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1999
5
Rev 1.000
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