Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Designed to withstand V
CES
pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
2.9
MAX.
1700
825
10
25
45
1.0
-
3.5
UNIT
V
V
A
A
W
V
A
µs
T
hs
≤
25 ˚C
I
C
= 4.5 A; I
B
= 1.0 A
f = 64 kHz
I
Csat
= 4.5 A; f = 64 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1
2
3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
10
25
10
14
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
1
Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 4.5 A; I
B
= 1.0 A
I
C
= 4.5 A; I
B
= 1.0 A
I
C
= 100 mA; V
CE
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
MIN.
-
-
-
7.5
825
-
-
-
4.5
TYP.
-
-
-
13.5
900
-
-
22
7
MAX.
1.0
2.0
1.0
-
-
1.0
1.0
-
10
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Csat
= 4.5 A; L
C
= 300
µH;
C
fb
= 2.5 nF; V
CC
= 160 V;
I
B(end)
= 1.0 A; L
B
= 2.0
µH;
-V
BB
= 4 V;
-I
BM
= 2.7 A
TYP.
MAX.
UNIT
2.9
0.19
3.5
0.25
µs
µs
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
ICsat
+ 50v
100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts
IBend
Vertical
100R
6V
30-60 Hz
1R
t
- IBM
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
Lc
250
200
100
IBend
LB
T.U.T.
Cfb
0
VCE / V
min
VCEOsust
-VBB
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times test circuit.
TRANSISTOR
IC
DIODE
ICsat
100
hFE
VCE = 5 V
BU2720/22AF
Ths = 25 C
Ths = 85 C
t
IB
I B end
t
5 us
6.5 us
16 us
10
VCE
t
1
0.01
0.1
1
10
IC / A
100
Fig.3. Switching times waveforms (64 kHz).
Fig.6. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
hFE
100
VCE = 1 V
BU2720/22AF
Ths = 25 C
Ths = 85 C
120
110
100
90
80
70
60
PD%
Normalised Power Derating
with heatsink compound
10
50
40
30
20
10
0
1
0.01
0.1
1
10
IC / A
100
0
20
40
60
80
Ths / C
100
120
140
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T
hs
)
VCEsat / V
10
Tj = 85 C
Tj = 25 C
BU2722AF
10
Zth / (K/W)
1
1
0.5
0.2
0.1
0.05
0.02
IC/IB = 8
IC/IB = 4
0.1
0.1
0.01
D=0
0.001
1E-06
P
D
t
p
D=
t
p
T
t
T
0.01
0.1
1
10
IC / A
100
1E-04
1E-02
t/s
1E+00
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
VBEsat / V
1
Tj = 85 C
Tj = 25 C
BU2722AF
ts, tf / us
10
BU2722AF
IC = 5.5 A
0.9
0.8
4.5 A
1
0.7
0.6
0
0.5
1
1.5
IB / A
2
0.1
0
1
2
3
IB / A
4
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.12. Typical storage and fall time.
t
s
= f(I
B
); t
f
= f(I
B
); I
C
= 4.5 A; f = 64 kHz; T
hs
= 85 ˚C
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
Ptot / W
100
Ths = 85 C
Ths = 25 C
BU2722AF
10
1
0
1
2
3
IB / A
4
IC / A
26
24
22
20
18
16
14
12
10
8
6
4
2
0
100
VCE / V
BU2720AF/DF
Area where
fails occur
1000
1700
Fig.13. Typical power dissipation.
P
tot
= f(I
B
); I
C
= 4.5 A; f = 64 kHz; Parameter T
hs
Fig.15. Reverse bias safe operating area. T
j
≤
T
jmax
VCC
LC
IBend
VCL
LB
T.U.T.
CFB
-VBB
Fig.14. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 4 V;
L
C
= 1 mH; V
CL
= 1500 V; L
B
= 1 - 3
µH;
C
FB
= 1 - 4 nF; I
B(end)
= 0.8 - 4 A
September 1997
5
Rev 1.200
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