DISCRETE SEMICONDUCTORS
DATA SHEET
M3D066
BFQ235A
NPN video transistor
Product specification
Supersedes data of 1997 Oct 02
1998 Oct 06
Discrete Semiconductors
Product specification
NPN video transistor
FEATURES
•
High breakdown voltages
•
Low output capacitance
•
High gain bandwidth
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
CRT amplifier buffer/driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT128B
(TO-202) plastic package.
PNP complement: BFQ255A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
1 2 3
BFQ235A
fpage
MGA323
Fig.1
Simplified outline
(SOT128B; TO-202).
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
Note
1. T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
1998 Oct 06
2
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
100
°C;
note 1; see Fig.3
open base
R
BE
= 100
Ω
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
95
110
3
300
3
+150
175
MAX.
115
V
V
V
V
mA
W
°C
°C
UNIT
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
T
s
≤
100
°C;
note 1
I
C
= 50 mA; V
CE
= 10 V; T
amb
= 25
°C
I
C
= 50 mA; V
CE
= 10 V; T
amb
= 25
°C
CONDITIONS
open emitter
R
BE
= 100
Ω
−
−
−
−
20
0.8
MIN.
−
−
−
−
35
1.2
TYP.
MAX.
115
110
300
3
−
−
GHz
UNIT
V
V
mA
W
Discrete Semiconductors
Product specification
NPN video transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
f
T
C
cb
PARAMETER
collector-base breakdown voltage
CONDITIONS
I
C
= 0.1 mA; I
E
= 0
MIN.
115
95
110
3
−
−
PARAMETER
CONDITIONS
BFQ235A
VALUE
25
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
100
°C;
note 1
TYP. MAX. UNIT
−
−
−
−
−
−
35
1.2
2
−
−
−
−
100
20
−
−
−
GHz
pF
V
V
V
V
µA
µA
collector-emitter breakdown voltage I
C
= 10 mA; I
B
= 0
collector-emitter breakdown voltage I
C
= 10 mA; R
BE
= 100
Ω
emitter-base breakdown voltage
collector cut-off current
collector cut-off current
DC current gain
transition frequency
collector-base capacitance
I
E
= 0.1 mA; I
C
= 0
I
B
= 0; V
CE
= 50 V
I
E
= 0; V
CB
= 50 V
I
C
= 50 mA; V
CE
= 10 V; T
amb
= 25
°C;
20
see Fig.4
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz;
T
amb
= 25
°C;
see Fig.6
I
C
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
°C;
see Fig.5
0.8
−
400
handbook, halfpage
IC
(mA)
300
MBB887
handbook, halfpage
4
MBB888
Ptot
(W)
3
200
2
100
1
0
0
20
40
60
VCEO (V)
80
0
0
50
100
150
Ts (
o
C)
200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1998 Oct 06
3
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
handbook, halfpage
50
MBB891
MBB890
handbook, halfpage
5.5
hFE
Ccb
(pF)
4.5
40
3.5
30
2.5
20
0
100
200
IC (mA)
300
1.5
0
10
20
30
VCB (V)
40
V
CE
= 10 V; T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Collector-base capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
1.5
MBK898
fr
(GHz)
1
0.5
0
0
50
100
IC (mA)
150
V
CE
= 10 V; f = 100 MHz; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
1998 Oct 06
4
Discrete Semiconductors
Product specification
NPN video transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
E1
P
c
1
BFQ235A
SOT128B
P1
HE
D
L2
L1
L
1
2
bp
e1
e
E
3
w
M
Q
A
c
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.6
4.4
bp
0.8
0.6
c
0.65
0.5
c1
0.56
0.46
D
8.6
8.4
E
10.1
9.9
E
1
10.4
10.0
e
5.08
5
scale
e1
2.54
10 mm
HE
24.2
23.8
L
13.3
12.2
L1
2.4
2.0
L2
(1)
max
2.5
P
3.8
3.6
P1
3.9
3.7
Q
1.7
1.5
w
0.25
Note
1. Plastic flash allowed within this zone
OUTLINE
VERSION
SOT128B
REFERENCES
IEC
JEDEC
TO-202
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1998 Oct 06
5
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