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IRGR3B60KD2TRPBF

Description
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size308KB,14 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRGR3B60KD2TRPBF Overview

Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3

IRGR3B60KD2TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionLEAD FREE, DPAK-3
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)7.8 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)105 ns
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)52 W
Certification statusNot Qualified
Maximum rise time (tr)22 ns
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)211 ns
Nominal on time (ton)35 ns
Base Number Matches1
PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
V
CES
= 600V
I
C
= 4.2A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.9V
D-Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ Tc = 25°C
I
F
@ Tc = 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
-55 to +150
Units
V
A
c
Diode Continous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
V
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Junction-to-Ambient, (PCB Mount)
Weight
Min.
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
8.8
50
–––
Units
°C/W
d
–––
–––
–––
g
www.irf.com
1
2/23/04

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Is it lead-free? Lead free - Lead free Lead free -
Is it Rohs certified? conform to - conform to conform to incompatible
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA - TO-252AA TO-252AA TO-252AA
package instruction LEAD FREE, DPAK-3 - LEAD FREE, DPAK-3 LEAD FREE, DPAK-3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3 3 3
Reach Compliance Code unknown - unknown unknown compliant
Is Samacsys N - N N N
Maximum collector current (IC) 7.8 A - 7.8 A 7.8 A 7.8 A
Collector-emitter maximum voltage 600 V - 600 V 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf) 105 ns - 105 ns 105 ns 105 ns
Gate emitter threshold voltage maximum 5.5 V - 5.5 V 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V - 20 V 20 V 20 V
JEDEC-95 code TO-252AA - TO-252AA TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 - e3 e3 e0
Humidity sensitivity level 1 - 1 1 1
Number of components 1 - 1 1 1
Number of terminals 2 - 2 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260 260 245
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 52 W - 52 W 52 W 52 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum rise time (tr) 22 ns - 22 ns 22 ns 22 ns
surface mount YES - YES YES YES
Terminal surface MATTE TIN OVER NICKEL - MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal location SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 - 30 30 30
transistor applications MOTOR CONTROL - MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON - SILICON SILICON SILICON
Nominal off time (toff) 211 ns - 211 ns 211 ns 211 ns
Nominal on time (ton) 35 ns - 35 ns 35 ns 35 ns
Base Number Matches 1 - 1 1 1
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