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LVA68AB

Description
Zener Diode, 6.8V V(Z), 2%, 0.4W, Silicon, Unidirectional, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size33KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

LVA68AB Overview

Zener Diode, 6.8V V(Z), 2%, 0.4W, Silicon, Unidirectional, DO-7, GLASS PACKAGE-2

LVA68AB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerCobham Semiconductor Solutions
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW VOLTAGE AVALANCHE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage6.8 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2%
Working test current1 mA
Base Number Matches1
SHARP BREAKDOWN, LOW LEAKAGE
LVA REGULATOR DIODES
LVA43A - LVA100A
Sharper breakdown
Lower leakage current characteristics in the 4 – 10 volt range
PART
NUMBER
NOMINAL
VOLTAGE
Vz @ Izt
(Vdc)
4.3
4.7
5.1
5.6
6
6.8
7.5
8.2
9.1
10.0
TEST
CURRENT
Izt
(mA)
20
10
5
1
1
1
1
1
1
1
MAX ZENER
IMPEDANCE
Zzt @ Izt
(OHMS)
18
15
15
40
50
50
100
100
100
100
MAX REVERSE
LEAKAGE CURRENT
Ir
Vr
(µAdc)
(Vdc)
4.0
1.5
4.0
2.0
0.1
2.0
0.05
3.0
0.05
4.0
0.05
5.0
0.01
6.0
0.01
6.5
0.01
8.0
0.01
9.0
MAX NOISE
DENSITY
@
250 µA
4
4
4
4
4
4
4
4
4
4
LVA43A
LVA47A
LVA51A
LVA56A
LVA62A
LVA68A
LVA75A
LVA82A
LVA91A
LVA100A
Package Style
Forward Voltage (Vf)
Noise Density (Nd)
Power Dissipation (Pd)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Voltage Tolerance:
@ If= 200 mAdc
@ Iz = 250 µAdc
@ Ta = 25° C
Standard Device
Suffix A
Suffix B
DO-7
1.5 Vdc
4.0 µV /
Hz
400 mW
-65 to + 175° C
-65 to + 200° C
±10%
±5%
±2%
Noise Density measured from 1000 to 3000 Hz.
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558
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