Small Signal Field-Effect Transistor, 0.015A I(D), 200V, 8-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Supertex |
| Parts packaging code | DIP |
| package instruction | IN-LINE, R-PDIP-T18 |
| Contacts | 18 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Configuration | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 0.015 A |
| Maximum drain current (ID) | 0.015 A |
| Maximum drain-source on-resistance | 600 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 2 pF |
| JESD-30 code | R-PDIP-T18 |
| JESD-609 code | e0 |
| Number of components | 8 |
| Number of terminals | 18 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 1.5 W |
| Maximum power dissipation(Abs) | 1.5 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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