DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PBR941
UHF wideband transistor
Product specification
Supersedes data of 1998 May 08
File under Discrete Semiconductors, SC14
1998 Aug 10
Philips Semiconductors
Product specification
UHF wideband transistor
FEATURES
•
Small size
•
Low noise
•
Low distortion
•
High gain
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Communication and instrumentation systems.
1
handbook, halfpage
PBR941
PINNING - SOT23
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
1
Top view
Marking code:
V0.
2
MAM255
2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
C
re
f
T
G
UM
F
P
tot
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°C
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
T
s
= 60
°C;
note 1
P
tot
= 360 mW
8
15
1.4
−
−
TYP.
0.3
MAX.
−
−
−
−
360
320
UNIT
pF
GHz
dB
dB
mW
K/W
1998 Aug 10
2
Philips Semiconductors
Product specification
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
P
tot
= 360 mW; T
s
= 60
°C;
note 1
VALUE
320
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−
−65
−
PBR941
MAX.
20
10
1.5
50
50
360
+150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
UNIT
K/W
1998 Aug 10
3
Philips Semiconductors
Product specification
UHF wideband transistor
CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
collector-base breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
I
C
= 100
µA;
I
E
= 0
I
E
= 10
µA;
I
C
= 0
V
CB
= 10 V; I
E
= 0
V
EB
= 1 V; I
C
= 0
I
C
= 5 mA; V
CE
= 6 V
I
C
= 15 mA; V
CE
= 6 V
AC characteristics
C
re
f
T
G
UM
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
−
−
−
−
−
−
0.3
8
15
9.5
1.4
2
20
10
1.5
−
−
50
−
−
−
−
−
−
100
100
PARAMETER
CONDITIONS
MIN.
TYP.
PBR941
MAX.
−
−
−
100
100
200
−
−
−
−
−
−
−
UNIT
V
V
V
nA
nA
collector-emitter breakdown voltage I
C
= 100
µA;
I
B
= 0
pF
GHz
dB
dB
dB
dB
S
21 2
=
10 log -------------------------------------------------------------- dB
(
1
–
S
11 2
) (
1
–
S
22 2
)
1998 Aug 10
4
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
handbook, halfpage
400
MDA871
handbook, halfpage
120
MDA872
Ptot
(mW)
300
80
hFE
200
40
100
0
0
50
100
150
Ts (°C)
200
0
0
10
20
30
40
IC (mA)
50
V
CE
= 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
DC current gain as a function of collector
current; typical values.
0.5
handbook, halfpage
Cre
(pF)
0.4
MDA873
handbook, halfpage
10
MDA874
fT
(GHz)
8
0.3
6
0.2
4
0.1
2
0
0
4
8
VCB (V)
12
0
0
10
20
30
IC (mA)
40
I
C
= 0; f = 1 MHz.
V
CE
= 6 V; f = 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
1998 Aug 10
5
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