Silicon Controlled Rectifier, 110A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-209AC, TO-209AC, 3 PIN
| Parameter Name | Attribute value |
| Maker | Microsemi |
| Parts packaging code | TO-94 |
| package instruction | POST/STUD MOUNT, O-MUPM-H3 |
| Contacts | 4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Shell connection | ISOLATED |
| Nominal circuit commutation break time | 100 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 200 V/us |
| Maximum DC gate trigger current | 100 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 200 mA |
| JEDEC-95 code | TO-209AC |
| JESD-30 code | O-MUPM-H3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Maximum rms on-state current | 110 A |
| Maximum repetitive peak off-state leakage current | 10000 µA |
| Off-state repetitive peak voltage | 300 V |
| Repeated peak reverse voltage | 300 V |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
| Trigger device type | SCR |
| Base Number Matches | 1 |
| 07103GOB | 07102GOB | 07102GOC | 07103GOC | |
|---|---|---|---|---|
| Description | Silicon Controlled Rectifier, 110A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-209AC, TO-209AC, 3 PIN | Silicon Controlled Rectifier, 110A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AC, TO-209AC, 3 PIN | Silicon Controlled Rectifier, 110A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AC, TO-209AC, 3 PIN | Silicon Controlled Rectifier, 110A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-209AC, TO-209AC, 3 PIN |
| Parts packaging code | TO-94 | TO-94 | TO-94 | TO-94 |
| package instruction | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-X3 | POST/STUD MOUNT, O-MUPM-X3 |
| Contacts | 4 | 4 | 4 | 4 |
| Reach Compliance Code | compliant | compli | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Nominal circuit commutation break time | 100 µs | 100 µs | 100 µs | 100 µs |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Critical rise rate of minimum off-state voltage | 200 V/us | 200 V/us | 200 V/us | 200 V/us |
| Maximum DC gate trigger current | 100 mA | 100 mA | 100 mA | 100 mA |
| Maximum DC gate trigger voltage | 3 V | 3 V | 3 V | 3 V |
| Maximum holding current | 200 mA | 200 mA | 200 mA | 200 mA |
| JEDEC-95 code | TO-209AC | TO-209AC | TO-209AC | TO-209AC |
| JESD-30 code | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-X3 | O-MUPM-X3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum rms on-state current | 110 A | 110 A | 110 A | 110 A |
| Maximum repetitive peak off-state leakage current | 10000 µA | 10000 µA | 10000 µA | 10000 µA |
| Off-state repetitive peak voltage | 300 V | 200 V | 200 V | 300 V |
| Repeated peak reverse voltage | 300 V | 200 V | 200 V | 300 V |
| surface mount | NO | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | HIGH CURRENT CABLE | HIGH CURRENT CABLE | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | UPPER | UPPER | UPPER |
| Trigger device type | SCR | SCR | SCR | SCR |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Maker | Microsemi | - | Microsemi | Microsemi |
| Is Samacsys | N | - | N | N |
京公网安备 11010802033920号
EEWORLD
