STP75NS04Z
N-channel Clamped - 7mΩ - 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features
Type
STP75NS04Z
■
■
■
V
DSS
Clamped
R
DS(on)
<
11mΩ
I
D
80A
Low capacitance and gate charge
100% avalanche tested
3
175°C maximum junction temperature
TO-220
1
2
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
Internal schematic diagram
Applications
■
■
Switching application
Power tools
Order codes
Part number
STP75NS04Z
Marking
P75NS04Z
Package
TO-220
Packaging
Tube
June 2006
Rev 1
1/12
www.st.com
12
Contents
STP75NS04Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP75NS04Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DG
V
GS
I
D(1)
I
D
I
DG
I
GS
I
DM(2)
P
TOT
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain gate current (continuos)
Gate source current (continuos)
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
Clamped
Clamped
Clamped
80
63
±50
±50
320
110
0.73
±8
-55 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
°C
V
ESD
T
j
T
stg
Gate-source ESD (HBM-C=100pF, R=1.5KΩ)
Operating junction temperature
Storage temperature
1. Current limited by wire bonding
2. Pulse with limited by safe operating area
Table 2.
Symbol
R
thj-case
R
thj-amb
T
l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Value
1.36
62.5
300
Unit
°C/W
°C/W
°C
Table 3.
Symbol
E
AS
Avalanche data
Parameter
Single pulse avalanche energy (starting Tj=25°C,
I
D
=I
AR
, V
DD
=25V)
Value
470
Unit
mJ
3/12
Electrical characteristics
STP75NS04Z
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold breakdown
voltage
Gate threshold voltage
Static drain-source on
resistance
Test condictions
I
D
= 1mA, V
GS
= 0
V
DS
= 16V
V
GS
= ±10V
I
GS
= ±100µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
18
2
3
7
4
11
Min.
33
1
Typ.
Max.
Unit
V
µA
µA
V
V
mΩ
2
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test condictions
V
DS
=15V, I
D
= 15A
V
DS
= 25V, f = 1 MHz,
V
GS
=0
V
DD
= 20V, I
D
= 80 A,
V
GS
= 10 V
(see Figure 13)
Min.
Typ.
50
1860
628
196
50
14
16
Max.
Unit
S
pF
pF
pF
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/12
STP75NS04Z
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching on/off
Parameter
Turn-on delay time
Rise time
Test condictions
V
DD
= 20V, I
D
= 40A
,
R
G
= 4.7
Ω
V
GS
= 10V,
(see Figure 12)
V
DD
= 20V, I
D
= 40A
,
R
G
= 4.7
Ω
V
GS
= 10V,
(see Figure 12)
Min.
Typ.
16
248
Max.
Unit
ns
ns
Turn-off delay time
Fall time
53
85
ns
ns
Table 7.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on Voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=80A, V
GS
=0
I
SD
=80A, di/dt = 100A/µs,
V
DD
=30V, Tj=150°C
(see Figure 17)
53
91
3.4
Test condictions
Min.
Typ.
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
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