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2SK3457

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size71KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3457 Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3457 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
ORDERING INFORMATION
PART NUMBER
2SK3457
PACKAGE
Isolated TO-220
FEATURES
Low gate charge
Q
G
= 24 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.0 A)
Gate voltage rating
±30
V
Low on-state resistance
R
DS(on)
= 2.2
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
800
±30
±5.0
±20
2.0
50
150
–55 to +150
5.0
73.8
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14754EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2000
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